IP Library Granted Patent US 7,160,406
Granted Patent B2
US 7,160,406 · App. 10/487,301 · Granted Jan 9, 2007

Ceramic substrate and method for the production thereof

Assignee: Epcos AG
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Quick Facts
Patent No.
US 7,160,406
App. No.
10/487,301
Granted
Jan 9, 2007
Kind
B2
Abstract

A process for producing a ceramic substrate includes preparing a base body using a stack of layers that contain an unsintered ceramic material and a sintering agent, and sintering the stack of layers. At least one of the layers contains an increased proportion of sintering agent relative to an adjacent layer.

Claims (22)

1. A process for producing a ceramic substrate, comprising:

preparing a base body using a stack of layers comprised of an unsintered ceramic material and a sintering agent, at least one of the layers containing an increased proportion of sintering agent relative to an adjacent layer; and

before sintering, arranging a forcing layer on a top layer of the stack, the forcing layer being attached to the stack by the sintering agent penetrating through the top layer into the forcing layer during sintering, wherein the sintering agent penetrates greater than 50 μm into the forcing layer;

sintering the stack of layers; and

removing the forcing layer.

2. The process according to claim 1 , wherein the sintering agent has a different chemical composition after sintering.

3. The process according to claim 1 , wherein a top layer of the stack contains a higher proportion of sintering agent than the adjacent layer.

4. The process according to claim 3 , further comprising:

forming a reaction layer in the adjacent layer between the top layer with the increased proportion of sintering agent and a remainder of the adjacent layer.

5. The process according to claim 4 , wherein a thickness of the reaction layer is between 5 μm and 100 μm.

6. The process according to claim 1 , wherein an unbinding and sintering profile is used to activate the increased proportion of sintering agent.

7. The process according to claim 1 , wherein a proportion of sintering agent in a layer containing the increased proportion of sintering agent is between 60 and 90 wt %.

8. The process according to claim 1 , further comprising:

after sintering and removing the forcing layer, applying a metal paste containing a sintering agent to a surface of a top layer of the stack; and

enameling the metal paste.

9. The process according to claim 1 , wherein the forcing layer has a thickness that is at least 100 μm greater than an amount by which the sintering agent penetrates into the forcing layer.

10. The process according to claim 1 , wherein the sintering agent comprises glass.

11. The process according to claim 1 , wherein layers that comprise Al 2 O 3 as ceramic material and glass as the sintering agent are used to form the stack.

12. The process according to claim 1 , wherein the stack is plate-shaped and has an area of at least 18 cm×18 cm and a height of 0.5 to 3 mm.

13. The process according to claim 1 , wherein the stack has conducting paths arranged between layers.

14. The process according to claim 1 , further comprising:

a forcing layer on a surface of a bottom layer of the stack.

Assignments (3)
CHANGE OF NAME Recorded Oct 26, 2022
From: EPCOS AG
To: TDK ELECTRONICS AG
Reel/Frame 061774/0102 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2004
From: HOFFMANN, CHRISTIAN; AICHHOLZER, KLAUS-DIETER
To: EPCOS AG
Reel/Frame 014887/0703 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 19, 2004
From: HOFFMANN, CHRISTIAN; ALCHHOLZER KLAUS-DIETER
To: EPCOS AG
Reel/Frame 014651/0051 →
Priority Claims (1)
DE 101 45 363 · Sep 14, 2001 · national
Continuity (1)
Related Publication 20040206546A1 · Oct 21, 2004