IP Library Granted Patent US 7,160,532
Granted Patent B2
US 7,160,532 · App. 10/412,524 · Granted Jan 9, 2007

Carbon nanotube array and method for forming same

Assignees: Tsinghua University; Hon Hai Precision Ind. Co., Ltd.
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Quick Facts
Patent No.
US 7,160,532
App. No.
10/412,524
Granted
Jan 9, 2007
Kind
B2
Abstract

A method for forming a carbon nanotube array using a metal substrate includes the following steps: providing a metal substrate ( 11 ); oxidizing the metal substrate to form an oxidized layer ( 21 ) thereon; depositing a catalyst layer ( 31 ) on the oxidized layer; introducing a carbon source gas; and thus forming a carbon nanotube array ( 61 ) extending from the metal substrate. Generally, any metallic material can be used as the metal substrate. Various carbon nanotube arrays formed using various metal substrates can be incorporated into a wide variety of high power electronic device applications such as field emission devices (FEDs), electron guns, and so on. Carbon nanotubes formed using any of a variety of metal substrates are well aligned, and uniformly extend in a direction substantially perpendicular to the metal substrate.

Claims (25)

1. A method for forming a carbon nanotube array, comprising the following steps:

providing a metal substrate;

oxidizing the substrate to form an oxidized layer on a surface of the substrate;

depositing a catalyst layer on the oxidized layer; and

introducing a carbon source gas;

whereby the carbon nanotube array formed extends from the metal substrate.

2. The method for forming a carbon nanotube array as described in claim 1 , wherein the substrate is a metal plate, or a metal electrode formed on a base.

3. The method for forming a carbon nanotube array as described in claim 2 , wherein a material of the metal substrate is selected from the group consisting of nickel, tantalum, silver and steel.

4. The method for forming a carbon nanotube array as described in claim 3 , wherein the material of the metal substrate is steel.

5. The method for forming a carbon nanotube array as described in claim 1 , wherein the substrate is oxidized in air at approximately 500° C.

6. The method for forming a carbon nanotube array as described in claim 1 , further comprising the following step before oxidizing the substrate: polishing the substrate to obtain a smooth surface thereon.

7. The method for forming a carbon nanotube array as described in claim 1 , wherein the catalyst layer comprises material selected from the group consisting of iron, cobalt, nickel and any suitable combination alloy thereof.

8. The method for forming a carbon nanotube array as described in claim 7 , wherein the catalyst layer comprises iron, and has a thickness in a range of 1˜10 nanometers.

9. The method for forming a carbon nanotube array as described in claim 1 , further comprising the following step after depositing the catalyst layer: annealing the substrate with the catalyst layer deposited thereon, said annealing being performed in the air at a temperature of 300° C. for several hours.

10. The method for forming a carbon nanotube array as described in claim 1 , wherein the carbon source gas is selected from the group consisting of acetylene, ethylene and any suitable chemical compound which contains carbon.

11. The method for producing a carbon nanotube array as described in claim 10 , wherein the carbon source gas is ethylene.

12. A carbon nanotube array subassembly comprising:

a metal substrate; and

a carbon nanotube array formed thereon;

wherein a material of the metal substrate is selected from the group consisting of tantalum, nickel, silver and steel, the metal substrate having an upper face, the upper face being oxidized to form an oxidized layer thereon.

13. A carbon nanotube array subassembly comprising:

a non-metallic base provided with a metallic upper face;

said upper face being oxidized to form an oxidized layer thereon;

a catalyst layer applied on said oxidized layer; and

a carbon nanotube array growing on said catalyst layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 10, 2003
From: LIU, LIANG; FAN, SHOUSHAN
To: TSINGHUA UNIVERSITY; HON HAI PRECISION IND. CO., LTD.
Reel/Frame 013966/0137 →
Priority Claims (1)
CN 03114036 · Mar 19, 2003 · national
Continuity (1)
Related Publication 20040184981A1 · Sep 23, 2004