IP Library Granted Patent US 7,164,305
Granted Patent B2
US 7,164,305 · App. 11/146,912 · Granted Jan 16, 2007

High-voltage tolerant input buffer circuit

Assignee: STMicroelectronics PVT. Ltd.
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Quick Facts
Patent No.
US 7,164,305
App. No.
11/146,912
Granted
Jan 16, 2007
Kind
B2
Abstract

The present invention provides a high-voltage tolerant input buffer circuit including a first NMOS transistor having its source terminal connected to the input pin, its gate terminal connected to a first reference voltage and its drain terminal connected to a first output terminal; a second NMOS transistor having its gate terminal connected to said first reference voltage and its source terminal connected to said first output terminal; a first PMOS transistor having its gate terminal connected to the drain terminal of said second NMOS transistor, its drain terminal connected to a second reference voltage lower than said first reference voltage and its source terminal connected to a second output terminal; a second PMOS transistor having its drain terminal connected to the drain terminal of said second NMOS transistor, its source terminal connected to said second output terminal, and its gate terminal connected to a control voltage; and a third PMOS transistor having its drain terminal connected to said second output terminal, its source terminal connected to a supply voltage, and its gate terminal connected to said control voltage.

Claims (13)

1. A high-voltage tolerant input buffer circuit comprising:

a first NMOS transistor having a source terminal coupled to an input pin, a gate terminal coupled to a first reference voltage, and a drain terminal coupled to a first output terminal;

a second NMOS transistor having a gate terminal coupled to said first reference voltage and a source terminal coupled to said first output terminal;

a first PMOS transistor having a gate terminal coupled to a drain terminal of said second NMOS transistor, a drain terminal coupled to a second reference voltage lower than said first reference voltage and a source terminal coupled to a second output terminal;

a second PMOS transistor having a drain terminal coupled to the drain terminal of said second NMOS transistor, a source terminal coupled to said second output terminal; and a gate terminal coupled to a control voltage; and

a third PMOS transistor having a drain terminal coupled to said second output terminal, a source terminal coupled to a supply voltage, and a gate terminal coupled to said control voltage.

2. The high-voltage tolerant input buffer circuit of claim 1 further comprising a first complementary cascode structure.

3. The high-voltage tolerant input buffer circuit of claim 2 wherein said first complementary cascode structure comprises a plurality of series-coupled transistors to provide feedback and improve response speed.

4. The high-voltage tolerant input buffer circuit of claim 2 wherein said first output terminal is coupled to a gate terminal of a lowermost NMOS transistor in said first complementary cascode structure.

5. The high-voltage tolerant input buffer circuit of claim 2 wherein said second output terminal is coupled to a gate terminal of a topmost PMOS transistor in said first complementary cascode structure.

6. The high-voltage tolerant input buffer circuit of claim 2 wherein said control voltage is coupled to an output of the first complementary cascode structure.

7. The high-voltage tolerant input buffer circuit of claim 2 further comprising a second complementary cascode structure.

8. The high-voltage tolerant input buffer circuit of claim 7 wherein said second complementary cascode structure comprises input terminals coupled in parallel with input terminals of said first complementary cascode structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 9, 2005
From: GUPTA, SUSHIL KUMAR; GARG, PARAS
To: STMICROELECTRONICS PVT. LTD.
Reel/Frame 016767/0726 →
Priority Claims (1)
IN 1060/DEL/2004 · Jun 8, 2004 · national
Continuity (1)
Related Publication 20050286333A1 · Dec 29, 2005