Semiconductor device, and method of fabricating the same
View Patent ↗A silicon oxynitride film is manufactured using SiH 4 , N 2 O and H 2 by plasma CVD, and it is applied to the gate insulating film ( 1004 in FIG. 1 A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N 2 O and H 2 . A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H 2 . Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased, to heighten an oxygen concentration by the increase of the flow rate of N 2 O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (V th ) and sub-threshold constant (S value) thereof.
1. A semiconductor device comprising:
a semiconductor layer formed over a substrate, the semiconductor layer including at least a channel region, and source and drain regions;
a gate electrode located over the channel region of the semiconductor layer;
at least first and second insulating films, each comprising silicon oxynitride interposed between the gate electrode and the channel region of the semiconductor layer; and
a third insulating film formed over the semiconductor layer, the first and second insulating films and the gate electrode;
wherein the second insulating film has a different composition from the first insulating film and is formed over the first insulating film,
wherein the gate electrode comprises at least a first layer and a second layer,
wherein the third insulating film is in contact with a part of the first insulating film, and
wherein the gate electrode has at least a tapered portion.
2. A semiconductor device according to claim 1 ,
wherein the first insulating film comprises silicon oxynitride having hydrogen concentration from 1.5 to 5 atomic %, nitrogen concentration from 2 to 15 atomic %, and oxygen concentration from 50 to 60 atomic %.
3. A semiconductor device according to claim 1 ,
wherein the second insulating film comprises silicon oxynitride having hydrogen concentration from 0.1 to 2 atomic %, nitrogen concentration from 0.1 to 2 atomic %, and oxygen concentration from 60 to 65 atomic %.
4. A semiconductor device according to claim 1 ,
wherein the third insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride and a laminate thereof.
5. A semiconductor device according to claim 1 ,
wherein the semiconductor layer has at least one lightly doped region formed between the channel region and the drain region.
6. A semiconductor device according to claim 1 ,
wherein the gate electrode overlaps the semiconductor layer having at least one lightly doped region.
7. A semiconductor device according to claim 1 ,
wherein the tapered portion overlaps at least one lightly doped region with the first and second insulating films interposed therebetween.
8. A semiconductor device according to claim 1 ,
wherein the third insulating film is in contact with the gate electrode.
9. A semiconductor device according to claim 1 , wherein the semiconductor device is one selected from the group consisting of a mobile phone, a video camera, an information processing terminal, a head-mount display, a projector, a personal computer, a DVD player, and a digital camera.
10. A semiconductor device according to claim 1 , wherein the semiconductor device is an EL display device.
11. A semiconductor device comprising:
a semiconductor layer formed over a substrate, the semiconductor layer including at least a channel region, and source and drain regions;
a gate electrode located over the channel region of the semiconductor layer;
at least first and second insulating films, each comprising silicon oxynitride interposed between the gate electrode and the channel region of the semiconductor layer; and
a third insulating film formed over the semiconductor layer, the first and second insulating films and the gate electrode;
wherein the first insulating film comprises silicon oxynitride having hydrogen concentration from 1.5 to 5 atomic %, nitrogen concentration from 2 to 15 atomic %, and oxygen concentration from 50 to 60 atomic %,
wherein the second insulating film comprises silicon oxynitride having hydrogen concentration from 0.1 to 2 atomic %, nitrogen concentration from 0.1 to 2 atomic %, and oxygen concentration from 60 to 65 atomic %, and
wherein the third insulating film is in contact with a part of the first insulating film
wherein the gate electrode has at least a first layer and a second layer.
12. A semiconductor device according to claim 11 ,
wherein the third insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride and a laminate thereof.
13. A semiconductor device according to claim 11 ,
wherein the semiconductor layer has at least one lightly doped region formed between the channel region and the drain region.
14. A semiconductor device according to claim 11 ,
wherein the gate electrode overlaps the semiconductor layer having at least one lightly doped region.
15. A semiconductor device according to claim 11 ,
wherein the gate electrode has at least a tapered portion, the tapered portion overlaps at least one lightly doped region with the first and second insulating films interposed therebetween.
16. A semiconductor device according to claim 11 ,
wherein the third insulating film is in contact with the gate electrode.
17. A semiconductor device according to claim 11 , wherein the semiconductor device is one selected from the group consisting of a mobile phone, a video camera, an information processing terminal, a head-mount display, a projector, a personal computer, a DVD player, and a digital camera.
18. A semiconductor device according to claim 11 , wherein the semiconductor device is an EL display device.