Silicon composition in CMOS gates
A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSi x film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSi y film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0≦y<1.
1. A method of manufacturing a semiconductor device, comprising:
forming an MSi y film, where M represents a metal element selected from tungsten and molybdenum and y is not less than 0 and less than 1, i.e., 0≦y<1, on a first gate insulating film within a first region in which an n-type MIS transistor is to be formed and on a second gate insulating film within a second region in which a p-type MIS transistor is to be formed; and
forming an MSi x film, where x is greater than 1, i.e., x>1, within the first region by allowing the MSi y film within the first region to react with silicon.
2. The method according to claim 1 , wherein forming the MSi x film comprises forming a silicon film on the MSi y film within the first region, and allowing the MSi y film within the first region to react with the silicon film by applying a heat treatment.
3. The method according to claim 1 , further comprising forming on the MSi x film a conductive film having a resistivity lower than that of the MSi x film.
4. The method according to claim 1 , wherein the value of x is not less than 2, i.e., x≧2.
5. A method of manufacturing a semiconductor device, comprising:
forming an MSi x film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1, on a first gate insulating film within a first region in which an n-type MIS transistor is to be formed and on a second gate insulating film within a second region in which a p-type MIS transistor is to be formed; and
forming an MSi y film, where y is not less than 0 and less than 1, i.e., 0≦y<1, within the second region by extracting silicon contained in the MSi x film within the second region.
6. The method according to claim 5 , wherein forming the MSi y film comprises forming a metal film on the MSi x film within the second region, and allowing the metal film to react with silicon contained in the MSi x film within the second region by applying a heat treatment.
7. The method according to claim 5 , wherein the value of x is not less than 2, i.e., x≧2.