Electroluminescence display apparatus
Side faces of anodes have a tapered incline that becomes broader toward a lower layer. Thus, an emissive element layer is smoothly formed on the anodes making it possible to prevent field contraction of the electric field. An EL display apparatus having long life and high yield is provided by preventing the emissive element layer from rupturing between an anode and a cathode and by preventing concentration of the electric field at an upper edge of the anode facing the cathode and localized deterioration in the emissive element layer.
1. An electroluminescence display apparatus comprising:
a first electrode formed above a substrate;
an emissive element layer formed on said first electrode;
a second electrode formed on said emissive element layer; and
a thickness of said first electrode is less than ½ a thickness of said emissive element layer, said thickness of said emissive element layer is approximately 200 nm.
2. An electroluminescence display apparatus comprising:
a first electrode formed above a substrate;
an emissive element layer formed on said first electrode;
a second electrode formed on said emissive element layer; and
a thickness of said first electrode is less than ⅓ a thickness of said emissive element layer, said thickness of said emissive element layer is approximately 200 nm.
3. An electroluminescence display apparatus comprising:
a first electrode formed above a substrate;
an emissive element layer formed on said first electrode;
a second electrode formed on said emissive element layer; and
a thickness of said first electrode is less than ½ a thickness of said emissive element layer, said Thickness of said emissive element layer is approximately 200 nm, wherein
said electroluminescence display apparatus is an active-matrix type comprising said first electrode formed independently at each pixel, and thin-film transistor for driving said emissive element.
4. An electroluminescence display apparatus according to claim 3 further comprising the planarization insulating film formed so as to cover said thin-film transistor, with said first electrode formed on said planarization insulating film.
5. An electroluminescence display apparatus according to claim 3 wherein said emissive element layer comprises a layered structure of a hole transport layer, an emissive layer, and an electron transport layer.
6. An electroluminescence display apparatus comprising:
a first electrode formed above a substrate;
an emissive element layer formed on said first electrode;
a second electrode formed on said emissive element layer; and
a thickness of said first electrode is less than ½ a thickness of said emissive element layer, said thickness of said emissive element layer is approximately 200 nm, wherein said electroluminescence display apparatus is a passive-matrix type wherein said first electrode extends in a first direction and said second electrode extends in a second direction so as to intersect said first electrode.
7. An electroluminescence display apparatus according to claim 6 wherein said emissive element layer comprises a layered structure of a hole transport layer, an emissive layer, and an electron transport layer.
8. An electroluminescence display apparatus comprising:
a first electrode formed above a substrate;
an emissive element layer formed on said first electrode, the emissive element layer comprises an organic layer that includes at least organic emissive molecules;
a second electrode formed on said emissive element layer;
a thickness of said first electrode is less than ½ the thickness of said emissive element layer; and
wherein said first electrode is formed independently at each pixel;
each pixel comprises a thin film transistor for driving said emissive element layer; and
a planarization insulating film is formed so as to cover said thin film transistor, with said first electrode being formed on said planarization insulating film.
9. An electroluminescence display apparatus comprising:
a first electrode formed above a substrate;
an emissive element layer formed on said first electrode, the emissive element layer comprises an organic layer that includes at least organic emissive molecules;
a second electrode formed on said emissive element layer;
a thickness of said first electrode is less than ⅓ a thickness of said emissive element layer; and
wherein said first electrode is formed independently at each pixel;
each nixel comprises a thin film transistor for driving said emissive element layer; and
a planarization insulatina film is formed so as to cover said thin film transistor, with said first electrode being formed on said planarization insulating film.