Method of setting process parameter and method of setting process parameter and/or design rule

1. A method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising:

correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit;

predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process;

obtaining an evaluation value by comparing the third pattern with the first pattern;

determining whether the evaluation value satisfies a preset condition; and

changing the process parameter information when the evaluation value is found not to satisfy the preset condition.

2. The method according to claim 1 , further comprising setting the changed process parameter information as the process parameter information in correcting the first pattern.

3. The method according to claim 2 , wherein said changing the process parameter information to said determining whether the evaluation value satisfies a preset condition are repeated until the evaluation value is found to satisfy the preset condition.

4. The method according to claim 1 , further comprising predicting a resist pattern by using the process parameter information before predicting the third pattern, said resist pattern being one which corresponds to the second pattern and which is to be formed by a lithography process.

5. The method according to claim 1 , further comprising predicting a mask pattern by using the process parameter information before predicting the third pattern, said mask pattern being one which corresponds to the second pattern and which is to be formed by a mask-forming process.

6. The method according to claim 1 , wherein the process parameter information contains a parameter which influences a shape of a pattern to be formed on the semiconductor wafer.

7. The method according to claim 1 , wherein the process parameter information contains at least one of parameters which relate to a mask-forming process, a lithography process and an etching process.

8. The method according to claim 1 , wherein correcting the first pattern is performed by using at least one of proximity corrections which relates to a mask-forming process, a lithography process and an etching process.

9. The method according to claim 1 , wherein the first pattern is obtained by compacting an original design layout of the semiconductor integrated circuit, in accordance with a given design rule.

10. A method of manufacturing a semiconductor device, comprising forming a pattern on a semiconductor substrate by using the method according to claim 1 .

11. A system for setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising:

means for correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit;

means for predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process;

means for obtaining an evaluation value by comparing the third pattern with the first pattern;

means for determining whether the evaluation value satisfies a preset condition; and

means for changing the process parameter information when the evaluation value is found not to satisfy the preset condition.

12. A program for setting a process parameter for use in manufacturing a semiconductor integrated circuit, said program causing a computer to:

correct a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit;

predict a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process;

obtain an evaluation value by comparing the third pattern with the first pattern;

determine whether the evaluation value satisfies a preset condition; and

change the process parameter information when the evaluation value is found not to satisfy the preset condition.