IP Library › Granted Patent US 7,183,648
Granted Patent B2
US 7,183,648 · App. 10/861,030 · Granted Feb 27, 2007

Method and apparatus for low temperature copper to copper bonding

Assignee: Intel Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,183,648
App. No.
10/861,030
Granted
Feb 27, 2007
Kind
B2
Abstract

A method comprising: coating a conductive bump on a first substrate with a conductive material to form a coated conductive bump; coating a conductive bump on a second substrate with a conductive material to form a coated conductive bump; and bonding the coated conductive bump on the first substrate to the coated conductive bump on the second substrate to electrically connect the first substrate to the second substrate.

Claims (7)

1. A device comprising:

two stacked substrates; and

a plurality of copper bumps provided on each substrate, wherein each of the plurality of copper bumps is coated with a conductive material and opposing coated copper bumps are bonded to one another to electrically connect the two stacked substrates.

2. The device of claim 1 , wherein the conductive material comprises a noble metal.

3. The device of claim 2 , wherein the noble metal comprises silver.

4. The device of claim 3 , wherein the two stacked substrates comprise a semiconductor die substrate and a package substrate.

5. The device of claim 3 , wherein the two stacked substrates comprise semiconductor substrates.

Continuity (3)
Division 1074658200 · Dec 24, 2003
Continuation In Part 1061074300 · Jul 2, 2003
Related Publication 20050003664A1 · Jan 6, 2005