Semiconductor memory device
A semiconductor memory device is provided for minutely changing a refresh interval according to a detected temperature and thereby lowering its power consumption. A temperature detector detects a temperature of a chip and outputs the corresponding temperature signal. A reference temperature signal output unit outputs the corresponding reference temperature signal with each of different reference temperatures to be compared with the chip temperature according to a selection signal. A temperature comparison unit compares the chip temperature with the reference temperature through the temperature signal and the reference temperature signal. A selection signal output unit outputs the selection signal according to the compared result of the temperature comparison unit. A refresh interval control unit changes the refresh interval according to the compared result of the temperature comparison unit.
1. A semiconductor memory device arranged to perform a refreshing operation for holding data, comprising:
a temperature detector unit for outputting a temperature signal;
a reference temperature signal output unit for outputting reference temperature signals according to a selection signal, said reference temperature signals corresponding to a plurality of difference reference temperatures to be compared with said temperature signal;
a temperature comparator unit for comparing said temperature signal with said reference temperature signal
a selection signal output unit for outputting said selection signal according to the output of said temperature comparator unit; and
a refresh interval control unit for changing an interval between said refresh operation according to the output of said temperature comparator unit.
2. The semiconductor memory device according to claim 1 , wherein said selection signal output unit includes a plurality of latch sections provided respectively for said reference temperatures and being selected by said selection signal, for latching said compared result, and a plurality of reference temperature selection sections provided respectively for said reference temperatures, each of said reference temperature selection sections being caused to output said selection signal according to said compared result latched by each of said latch units and said compared result of said temperature comparator unit.
3. The semiconductor memory device according to claim 2 , wherein said reference temperature selection units are inputted with said compared result of the corresponding latch section with said reference temperature, said compared result of the corresponding latch section with said reference temperature being lower by one temperature step, and said compared result of the corresponding latch section with said reference temperature being higher by one temperature step.
4. The semiconductor memory device according to claim 2 , wherein said refresh interval control unit operates to change an interval between said refresh operation according to said compared result latched by said latch section.
5. The semiconductor memory device according to claim 1 , wherein if said temperature is lower than said reference temperature, said selection signal output unit outputs said selection signal so as to select the corresponding reference temperature signal with said reference temperature being lower by one temperature step, while if said temperature is higher than said reference temperature, said selection signal output unit outputs said selection signal so as to select the corresponding reference temperature signal with said reference temperature being higher by one temperature step.
6. The semiconductor memory device according to claim 1 , wherein said refresh interval control unit makes said refresh interval longer as said reference temperature being currently compared is lower and makes said refresh interval shorter as said reference temperature is higher.
7. The semiconductor memory device according to claim 1 , wherein said temperature detection unit outputs said temperature signal through the effect of a threshold value voltage of a diode having a temperature dependency.
8. The semiconductor memory device according to claim 1 , wherein said reference temperature signal output unit divides a constant voltage and outputs said divided voltage as said reference temperature signal.