Apparatus for providing gas to a processing chamber
An apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.
1. Apparatus for generating gas for a semiconductor processing system, comprising:
a canister having a sidewall, a top and a bottom defining an interior volume, the interior volume having an upper region and a lower region;
an inlet port and an outlet port formed through the top of the canister and in communication with the upper region;
at least one baffle disposed within the upper region of the canister and creating a tortuous flow path between the inlet port and the outlet port; and
a precursor material at least partially filling the lower region of the canister.
2. The apparatus of claim 1 , further comprising:
a first valve coupled to the inlet port; and
a second valve coupled to the outlet port.
3. The apparatus of claim 1 , further comprising a tube having a first end coupled to the inlet port and a second end terminating in the upper region of the canister.
4. The apparatus of claim 3 , wherein the second end is angled from about 15 degrees to about 90 degrees relative to an axis of the canister.
5. The apparatus of claim 1 , further comprising a liquid intermixed with the precursor material and forming a slurry, wherein the liquid is non-reactive with the precursor material, has a negligible vapor pressure relative to the precursor material, and the precursor material is insoluble therein.
6. The apparatus of claim 5 , wherein the precursor material is tungsten hexacarbonyl and the liquid is diffusion pump oil.
7. The apparatus of claim 5 , further comprising means for agitating the slurry.
8. The apparatus of claim 7 , wherein the means for agitating is selected from the group consisting of a magnetic stirrer, a mixer, and a bubbler.
9. The apparatus of claim 1 , wherein the precursor material is selected from the group consisting of xenon difluoride, nickel carbonyl, tungsten hexacarbonyl, and pentakis (dimethylamido) tantalum.
10. The apparatus of claim 1 further comprising an oil trap coupled to the outlet port.
11. The apparatus of claim 1 , wherein the at least one baffle is a plurality of interleaved baffles.
12. The apparatus of claim 11 , wherein the plurality of baffles extends at least partially into the lower region of the canister.
13. The apparatus of claim 1 , further comprising a means for heating the precursor material.
14. The apparatus of claim 13 , wherein the means for heating the precursor material is at least one of a resistive heater disposed proximate to the sidewall, a cartridge heater disposed within the canister, or a preheated carrier gas.
15. The apparatus of claim 1 , wherein the precursor material is selected from the group consisting of tetrakis (dimethylamido) titanium (TDMAT), tertbutylimino tris(diethylamido) tantalum (TBTDET), and pentakis (ethylmethylamido) tantalum (PEMAT).
16. Apparatus for generating gas for a semiconductor processing system, comprising:
a canister having a sidewall, a top and a bottom defining an interior volume, the interior volume having an upper region and a lower region;
an inlet port and an outlet port formed through the top of the canister and in communication with the upper region; and
a tube having a first end coupled to the inlet port and a second end terminating in the upper region of the canister; and
an aperture formed in the second end of the tube orientated towards a sidewall of the canister.
17. The apparatus of claim 16 , further comprising:
a first valve coupled to the inlet port; and
a second valve coupled to the outlet port, the first and second valves fitted with mating disconnect fittings.
18. The apparatus of claim 16 , wherein the aperture formed in the second end is angled from about 15 degrees to about 90 degrees relative to an axis of the canister.
19. The apparatus of claim 16 , further compromising a precursor material at least partially filling the lower region of the canister.
20. The apparatus of claim 19 , further comprising a liquid intermixed with the precursor material and forming a slurry, wherein the liquid is non-reactive with the precursor material, has a negligible vapor pressure relative to the precursor material, and the precursor material is insoluble therein.
21. The apparatus of claim 20 , wherein the precursor material is selected from the group consisting of xenon difluoride, nickel carbonyl, tungsten hexacarbonyl, and pentakis (dimethylamido) tantalum.
22. The apparatus of claim 20 , wherein the precursor material is tungsten hexacarbonyl and the liquid is diffusion pump oil.
23. The apparatus of claim 20 , further comprising means for agitating the slurry.
24. The apparatus of claim 23 , wherein the means for agitating is selected from the group consisting of a magnetic stirrer, a mixer, and a bubbler.
25. The apparatus of claim 16 , further comprising an oil trap coupled to the outlet port.
26. The apparatus of claim 16 , further comprising at least one baffle disposed within the upper region of the canister between the inlet port and the outlet port.
27. The apparatus of claim 26 , wherein the at least one baffle is a plurality of baffles.
28. The apparatus of claim 27 , wherein the plurality of baffles extends at least partially into the lower region of the canister.
29. The apparatus of claim 16 , further comprising a means for heating the interior volume of the canister.
30. The apparatus of claim 29 , wherein the means for heating the interior volume of the canister is at least one of a resistive heater disposed proximate to the sidewall, a cartridge heater disposed within the canister, or a preheated carrier gas.
31. The apparatus of claim 19 , wherein the precursor material is selected from the group consisting of tetrakis (dimethylamido) titanium (TDMAT), tertbutylimino tris(diethylamido) tantalum (TBTDET), and pentakis (ethylmethylamido) tantalum (PEMAT).
32. Apparatus for generating gas for a processing system, comprising:
a canister having a sidewall, a top and a bottom defining an interior volume, the interior volume having an upper region and a lower region;
an inlet port and an outlet port formed through the top of the canister and in communication with the upper region;
a first valve coupled to the inlet port; and
a second valve coupled to the outlet port, the first and second valves fitted with mating disconnect fittings for modular removal of the apparatus from a semiconductor process gas delivery system;
a tube having a first end coupled to the inlet port and a second end terminating in the upper region of the canister, wherein the second end is angled from about 15 degrees to about 90 degrees relative to a center axis of the canister; and
a plurality of baffles disposed within the upper region of the canister and creating a tortuous flow path between the inlet port and the outlet port.
33. The apparatus of claim 32 , further comprising solid precursor material at least partially filling the lower region of the canister;
a liquid intermixed with the solid precursor material forming a slurry, wherein the liquid is non-reactive with the solid precursor material, has a negligible vapor pressure relative to the solid precursor material, and the solid precursor material is insoluble therein;
means for heating the interior volume of the canister; and
means for agitating the slurry.
34. The apparatus of claim 33 , wherein the means for heating the interior volume of the canister is at least one of a resistive heater disposed proximate to the sidewall, a cartridge heater disposed within the canister, or a preheated carrier gas.
35. The apparatus of claim 34 , wherein the means for agitating the slurry is selected from the group consisting of a magnetic stirrer, a mixer, and a bubbler.
36. The apparatus of claim 19 , wherein the precursor material is selected from the group consisting of xenon difluoride, nickel carbonyl, tungsten hexacarbonyl, and pentakis (dimethylamido) tantalum, the semiconductor processing system, comprising:
a canister having a sidewall, a top and a bottom defining an interior volume, the interior volume having an upper region and a lower region;
an inlet port and an outlet port formed through the top of the canister and in communication with the upper region;
at least one baffle disposed within the upper region of the canister between the inlet port and the outlet port; and
a solid material at least partially filling the lower region of the canister and adapted to sublimate to a gas vapor when heated to a predefined temperature at a predefined pressure.
37. The apparatus of claim 1 , wherein the baffles are prefabricated to insert into the canister.
38. The apparatus of claim 1 , wherein the baffles forms an extended man flow path from the upper region into the lower region of the canister.