IP Library Granted Patent US 7,187,072
Granted Patent B2
US 7,187,072 · App. 10/705,706 · Granted Mar 6, 2007

Fabrication process of semiconductor package and semiconductor package

Assignee: Hitachi Chemical Company, Ltd.
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Quick Facts
Patent No.
US 7,187,072
App. No.
10/705,706
Granted
Mar 6, 2007
Kind
B2
Abstract

A semiconductor package substrate is provided, which can meet the move toward high integration of semiconductors. A nickel layer is plated on an electroplated copper foil to form a wiring pattern. An LSI chip is mounted on the copper foil, and terminals of the LSI chip and the wiring pattern are connected by wire bonding, followed by sealing with a semiconductor-sealing epoxy resin. Only the copper foil is dissolved away with an alkali etchant to expose nickel. With a nickel stripper having low copper-dissolving power, the nickel layer is removed to expose the wiring pattern. A solder resist is coated, and a pattern is formed in such a way that connecting terminal portions are exposed. Solder balls are placed at the exposed portions of the wiring pattern and are then fused. The wiring pattern is connected to an external printed board via the solder balls.

Claims (15)

1. A substrate for mounting semiconductor device, comprising:

plural semiconductor-mounting substrate portions, each for mounting a respective semiconductor device,

a connecting portion for connecting said semiconductor-mounting substrate portions: and

a registration mark portion,

wherein each of said semiconductor-mounting substrate portions comprises wirings that

include an external connection terminal and a wire bonding terminal provided in an outer side than said external connection terminal, and

said connecting portion comprises an electrically conductive layer.

2. A substrate for mounting a semiconductor device according to claim 1 , wherein said electrically conductive layer and said wirings are made of the same material.

3. A substrate for mounting a semiconductor device as claimed in claim 1 , wherein nickel and gold are plated on a surface of said wirings.

4. A substrate for mounting a semiconductor devices as claimed in claim 2 , wherein nickel and gold is plated on a surface of said wirings.

5. A substrate for mounting a semiconductor device as claimed in claim 1 , wherein said wire bonding terminal is a terminal for connecting a wire from said semiconductor device thereto.

6. A substrate for mounting a semiconductor device as claimed in claim 5 , wherein said external connection terminal is for electrically connecting said substrate to an outer wiring.

7. A substrate for mounting a semiconductor device as claimed in claim 1 , wherein said external connection terminal is for electrically connecting said substrate to an outer wiring.

8. A substrate for mounting a semiconductor device as claimed in claim 1 , wherein said plural semiconductor-mounting substrate portions are side-by-side.

9. A substrate for mounting a semiconductor device as claimed in claim 1 , wherein said plural semiconductor-mounting substrate portions are in a plane.

Priority Claims (4)
JP 6-48760 · Mar 18, 1994 · national
JP 6-273469 · Nov 8, 1994 · national
JP 7-7683 · Jan 20, 1995 · national
JP 7-56202 · Mar 15, 1995 · national
Continuity (5)
Division 1000861600 · Oct 23, 2001
Continuation 0948768200 · Jan 19, 2000
Division 0932631600 · Jun 7, 1999
Continuation 0871636200 · Sep 18, 1996
Related Publication 20040110319A1 · Jun 10, 2004