Process for producing light-emitting semiconductor device
The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of the polycarbodiimide-containing layer.
1. A process for producing a light-emitting semiconductor device, which comprises:
(1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and
(2) forming irregularities on the surface of the polycarbodiimide-containing layer,
wherein the polycarbodiimide-containing layer contains a polycarbodiimide represented by general formula (1):
wherein R represents a diisocyanate residue, R 1 represents a monoisocyanate residue, and n is an integer of 1 to 100.
2. The process for producing a light-emitting semiconductor device of claim 1 , wherein the polycarbodiimide-containing layer before the formation of surface irregularities has a thickness of 0.5 to 10 μm.
3. The process for producing a light-emitting semiconductor of claim 1 , wherein the polycarbodiimide-containing layer has a refractive index of 1.7 or higher.
4. The process for producing a light-emitting semiconductor of claim 1 , wherein the polycarbodiimide-containing layer has a modulus of elasticity at 150° C. of 0.2 to 3 GPa.
5. The process for producing a light-emitting semiconductor of claim 1 , wherein the formation of the irregularities is carried out by pressing the polycarbodiimide-containing layer with a die having irregularities under application of heat.
6. The process for producing a light-emitting semiconductor of claim 1 , wherein the irregularities comprise protrusions having a height of 1 to 5 pm.
7. The process for producing a light-emitting semiconductor of claim 6 , wherein the protrusions each have a semispherical shape.