Electrooptic device comprising a silicon nitride film formed directly on the data lines and not existent on a side face of contact holes
On a TFT array substrate, an electrooptic device contains pixel electrodes disposed in an image display region, TFTs which are disposed in a peripheral region at the periphery of the image display region and which form a peripheral circuit, and a protective film formed so as to cover at least a part of the peripheral region. The protective film is not provided in at least a part of an opening region of each pixel formed in the image display region. Accordingly, in the electrooptic device, such as a liquid crystal device, while the device life is increased by protecting electronic elements, such as transistors formed on the substrate by the protective film, degradation of display image quality caused by the presence of the protective film is reduced or prevented.
1. An electrooptic device, comprising:
a substrate including an image display region and a peripheral region outboard of the image display region;
display electrodes being pixel electrodes and disposed in the image display region above the substrate, the display electrodes having light transparency;
electronic elements disposed in the peripheral region and including a peripheral circuit;
a silicon nitride film formed to cover at least a part of the peripheral region; and
first transistors disposed in the image display region, and electrically connected to the pixel electrodes,
the silicon nitride film being provided under the display electrodes and not being provided in an entire opening region of each pixel in the image display region and being provided in a region of shading film of the each pixel in the image display and being provided only in a striped shape region along data lines in the image display region, the silicon nitride film being in direct contact with upper and side surfaces of the data lines without any interlayer between the silicon nitride film and the data lines, and
the pixel electrodes and the first transistors being electrically connected to each other via contact holes, which are formed in a region at which the silicon nitride film is not formed so that the silicon nitride film is not existent on a side face of the contact holes.