CVD plasma assisted low dielectric constant films
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH 3 SiH 3 , or dimethylsilane, (CH 3 ) 2 SiH 2 , and nitrous oxide, N 2 O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10–30% of the duty cycle.
1. A method for depositing a low dielectric constant film, comprising introducing an oxygen containing compound and 1,3,5-trisilano-2,4,6-trimethylene into a chamber and reacting the oxygen containing compound and the 1,3,5-trisilano-2,4,6-trimethylene to deposit a low dielectric constant film comprising hydrogen, silicon, carbon, and oxygen on a substrate in the chamber.
2. The method of claim 1 , wherein the oxygen containing compound is nitrous oxide.
3. The method of claim 2 , wherein the nitrous oxide and the 1,3,5-trisilano-2,4,6-trimethylene are reacted under plasma conditions.
4. The method of claim 3 , further comprising introducing a carrier gas into the chamber.
5. The method of claim 4 , wherein the carrier gas is helium.
6. The method of claim 5 , wherein the nitrous oxide and the 1,3,5-trisilano-2,4,6-trimethylene are reacted at a volume ratio of 1:1.
7. The method of claim 6 , wherein the nitrous oxide and the 1,3,5-trisilano-2,4,6-trimethylene are reacted at a temperature of about 40° C.