Thin film transistor with microlens structures
A thin film transistor with a microlens. A metal gate is formed on a substrate. A gate dielectric covers the metal gate. A semiconductor layer is formed on the gate dielectric. Source/drain metal layers respectively overlap ends of the top surface of the semiconductor layer such that the semiconductor layer between the source/drain metal layers is exposed. The microlens is formed on the exposed top surface of the semiconductor layer.
1. A thin film transistor comprising:
a metal gate formed on a substrate;
a gate dielectric over the metal gate;
a semiconductor layer on the gate dielectric;
source/drain metal layers respectively covering ends of the top surface of the semiconductor layer such that the semiconductor layer between the source/drain metal layers is exposed; and
a microlens on the exposed semiconductor layer.
2. The thin film transistor as claimed in claim 1 , wherein a passivation layer is sandwiched between the microlens and the semiconductor layer.
3. The thin film transistor as claimed in claim 1 , wherein the semiconductor layer comprises silicon.
4. The thin film transistor as claimed in claim 1 , wherein the microlens is a photoresist.
5. A thin film transistor liquid crystal display comprising the thin film transistor as claimed in claim 1 .
6. A method of forming a thin film transistor with a microlens comprising:
forming a thin film transistor on a substrate, the thin film transistor having a semiconductor layer, with ends covered by source/drain metal layers; and
forming a microlens on the semiconductor layer not covered by the source/drain metal layers.
7. The method as claimed in claim 6 , further comprising forming a passivation layer between the microlens and the semiconductor layer.
8. The method as claimed in claim 6 , wherein the semiconductor layer comprises silicon.
9. The method as claimed in claim 6 , wherein the microlens is a photoresist.
10. The method as claimed in claim 9 , wherein the step of forming a microlens comprises coating the photoresist on the thin film transistor.
11. The method as claimed in claim 6 , wherein the step of forming a microlens comprises controlling the shape of the microlens through lithography or mask design.