IP Library › Granted Patent US 7,208,743
Granted Patent B2
US 7,208,743 · App. 10/483,222 · Granted Apr 24, 2007

Method and device for determining the personal dose in mixed neutron/photon fields

Assignee: Bundesrepublik Deutschland, vertreten durch das Bundesministerium für Wirtschaft und Arbeit, dieses wiederum vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt
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Quick Facts
Patent No.
US 7,208,743
App. No.
10/483,222
Granted
Apr 24, 2007
Kind
B2
Abstract

The invention relates to an instrument which uses an individual semi-conductive detector with special coverings as an essential sensor, and a method whereby the amplitude information of the signals from said semi-conductive detector are used to determine a person's dose in mixed neutron/photon-fields. Said instrument is highly sensitive and has a low energy dependency. It is possible for the dose to be read directly, and to emit a warning if the dose limit is exceeded. The inventive method enables a compact person's dose meter, which is immune to interference, to be produced with low power consumption.

Claims (9)

1. An apparatus for determining a personal dose equivalent on a combined neutron/photon field, comprising:

a single semiconductor neutron and photon detector, constructed and arranged to detect neutrons and photons, and to output a corresponding pulse signal having an amplitude statistically representative of whether a neutron or photon is detected; and

a dose equivalent detector, constructed and arranged to receive said pulse signals and, based on a count of said pulse signals and the amplitudes of said pulse signals, to generate a total dose equivalent data representing a total dose of neutrons and a total dose of photons detected over the same given time period.

2. The apparatus of claim 1 , wherein the semiconductor detector includes a silicon detector having a sensitive depleted layer, and wherein the thickness of said layer is between approximately 1 μm and 400 μm.

3. The apparatus of claim 1

wherein the semiconductor detector includes a silicon detector having a sensitive depleted layer, and wherein

neutron converters, constructed and arranged to convert thermal neutrons, and fast neutrons into emitted protons, is arranged in front of said sensitive depleted layer, and

wherein said neutron converters each include one or more materials having a 6 Li and 10 B content, for detecting the thermal neutrons, and a plastic containing hydrogen, for detecting the fast neutrons.

4. The apparatus of claim 3 , further comprising a thermal neutron absorber, formed of materials including 6 Li and 10 B, surrounding said single semiconductor detector and neutron converters, constructed and arranged to reduce a thermal neutron sensitivity of said semiconductor counter and said neutron converter.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 24, 2004
From: LUSZIK-BHADRA, MARLIES; WENDT, WILFRIED
To: BUNDESREPUBLIK DEUTSCHLAND, VERTRETEN DURCH DAS BUNDESMINISTERIUM FUR WIRTSCHAFT UND ARBEIT, DIESES WIEDERUM VERTRETEN DURCH DEN PRASIDENTEN DER PHYSIKALISCH-TECHNISCHEN BUNDESANSTALT
Reel/Frame 015496/0949 →
Priority Claims (1)
DE 101 32 550 · Jul 9, 2001 · national
Continuity (1)
Related Publication 20040188677A1 · Sep 30, 2004