IP Library › Granted Patent US 7,216,419
Granted Patent B2
US 7,216,419 · App. 11/218,812 · Granted May 15, 2007

Method of manufacturing a high-frequency coil device

Assignee: Sony Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,216,419
App. No.
11/218,812
Granted
May 15, 2007
Kind
B2
Abstract

In a high-frequency coil device having small dispersion in coil inductance and suitable for use in GHz band and a method of manufacturing the high-frequency coil device, a spirally-shaped fine-pitch coil is embedded in the surface of a polyimide layer as a dielectric substrate so that the bottom surface and side surface of the coil is covered by the polyimide layer. The spirally-shaped coil has an Ni—Cu laminate structure in which an Ni plating layer and a Cu plating layer are laminated, and also the side surface thereof is made substantially vertical while the width thereof is uniform with high precision. The surface of the spirally-shaped coil, that is, the surface of the Ni plating layer serving as the upper layer is coated with an Au plating layer.

Claims (12)

1. A method of manufacturing a high-frequency coil device having a stable Q value, comprising:

providing a dielectric substrate; and

forming a coil comprised of a conductive layer in a predetermined coil pattern embedded in the surface of said dielectric substrate, wherein portions of the bottom surface and side surface of said coil are covered by said dielectric substrate, and said coil has other portions which have a gap between a bottom surface of the coil and the substrate, and

wherein said high-frequency coil device has the stable Q value.

2. The method of manufacturing a high-frequency coil device as claimed in claim 1 , wherein said dielectric substrate is a polyimide layer or a liquid crystal polymer layer.

3. The method of manufacturing a high-frequency coil device as claimed in claim 1 , wherein said conductive layer has a multi-layered structure in which a nickel plating layer and a copper plating layer are laminated.

4. A method of manufacturing a high-frequency coil device having a stable Q value, comprising:

providing a dielectric substrate; and

forming a coil comprised of a conductive layer, wherein portions of the bottom surface and side surface of said coil are covered by said dielectric substrate, and said coil has other portions which have a gap between a bottom surface of the coil and the substrate, and

wherein said high-frequency coil device has a stable Q value.

5. The method of manufacturing a high-frequency coil device as claimed in claim 4 , wherein said dielectric substrate is a polyimide layer or a liquid crystal polymer layer.

6. The method of manufacturing a high-frequency coil device as claimed in claim 4 , wherein said conductive layer has a multi-layered structure in which a nickel plating layer and a copper plating layer are laminated.

Priority Claims (1)
JP 2000-236900 · Aug 4, 2000 · national
Continuity (3)
Continuation 1067565900 · Sep 30, 2003
Division 0991577200 · Jul 26, 2001
Related Publication 20060001519A1 · Jan 5, 2006