Alternative flip chip in leaded molded package design and method for manufacture
A semiconductor package is disclosed. The package includes a leadframe structure comprising a die attach region and plurality of leads. A molding material is molded around at least a portion of the leadframe structure, and comprises a window. A semiconductor die comprising an edge is mounted on the die attach region and is within the window. A gap is present between the edge of the semiconductor die and the molding material.
1. A method for making a semiconductor package comprising:
(a) molding a molding material around a leadframe structure having a die attach region and a plurality of leads, wherein a window and an exterior surface are formed in the molded molding material after molding, and wherein the die attach region is exposed through the window in the molding material; and
(b) after (a), mounting a semiconductor die having a surface with an electrical terminal to the die attach region and within the window using a flip chip mounting process,
wherein after mounting, the leads have surfaces that are substantially coplanar with the exterior surface of the molding material and the surface of the die with the electrical terminal, and wherein the surface of the die with the electrical terminal is exposed by the window in the molding material.
2. The method of claim 1 further comprising, after (b):
reflowing solder that is between the die attach region of the leadframe and the semiconductor die.
3. The method of claim 1 wherein the die attach region comprises at least one aperture.
4. The method of claim 1 wherein molding comprises placing the leadframe structure in a molding tool.
5. The method of claim 1 further comprising depositing solder on the die attach region of the leadframe structure and within the window.
6. The method of claim 1 wherein the plurality of leads comprises a source lead and a gate lead.
7. The method of claim 1 further comprising:
attaching a heat plate structure to the leadframe structure.
8. The method of claim 1 wherein the electrical terminal is a drain terminal.
9. The method of claim 1 further comprising depositing a first solder on the die attach region, and depositing a second solder on the die.
10. The method of claim 1 , wherein the die comprises a vertical power MOSFET including a trenched gate.
11. The method of claim 1 wherein the window is a first window and wherein a second window is formed in the molding material after molding, wherein the second window exposes a surface of the leadframe structure opposite to the die attach surface.
12. The method of claim 11 further comprising attaching a heat plate structure to the surface of the leadframe structure that is exposed through the second window.
13. The method of claim 12 wherein the heat plate structure comprises a leg that extends over a side of the molding material.
14. The method of claim 1 wherein after (b), a package is formed, and wherein the method further comprises:
mounting the package on a circuit substrate, wherein the surface of the die with the electrical terminal, the exterior surface of the molding material, and the surfaces of the leads are proximate to a surface of the circuit substrate.
15. The method of claim 14 wherein the electrical terminal is a drain terminal in a power MOSFET in the semiconductor die.