Method for depositing tungsten-containing layers by vapor deposition techniques
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
1. A method for forming a tungsten-containing material on a substrate, comprising:
forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process; and
forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas comprising the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process.
2. The method of claim 1 , wherein the boron-containing gas comprises diborane.
3. The method of claim 2 , wherein the tungsten-containing gas comprises tungsten hexafluoride.
4. The method of claim 3 , wherein the substrate is exposed to argon gas prior to sequentially exposing the substrate to the boron-containing gas and the tungsten-containing gas.
5. The method of claim 1 , wherein the tungsten nucleation layer is deposited on a barrier layer disposed on the substrate.
6. The method of claim 5 , wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, and combinations thereof.
7. The method of claim 1 , wherein the tungsten nucleation layer is deposited on a silicon-containing layer disposed on the substrate.
8. The method of claim 7 , wherein the silicon-containing layer comprises silicon oxide.
9. The method of claim 1 , wherein the reactive precursor gas comprises a gas selected from the group consisting of silane, hydrogen, argon, and combinations thereof.
10. A method for forming a tungsten-containing material on a substrate, comprising:
providing a substrate comprising a dielectric surface into a processing chamber;
exposing the dielectric surface to tungsten hexafluoride for a predetermined time within the processing chamber;
depositing a first tungsten-containing layer on the dielectric surface by sequentially exposing the substrate to the tungsten hexafluoride and a reactive precursor gas within the processing chamber during an atomic layer deposition process, wherein the reactive precursor gas comprises a nitrogen-containinci gas; and
depositing a second tungsten-containing layer on the first tungsten-containing layer by exposing the substrate to the tungsten hexafluoride and another reactive precursor gas during a vapor deposition process.
11. The method of claim 10 , wherein the dielectric surface comprises a silicon-containing material.
12. The method of claim 11 , wherein the silicon-containing layer comprises silicon oxide.
13. The method of claim 10 , wherein the second tungsten-containing layer is deposited on the first tungsten-containing layer within the processing chamber.
14. The method of claim 10 , wherein the predetermined time is within a range from about 0.01 seconds to about 15 seconds.
15. A method for forming a tungsten-containing material on a substrate, comprising:
positioning a substrate within a processing chamber, wherein the substrate comprises a plurality of vias formed therein;
exposing the substrate sequentially to a boron-containing gas and a tungsten-containing gas to form a tungsten nucleation layer within the vias during an atomic layer deposition process;
exposing the substrate to a flow of a processing gas comprising the tungsten-containing gas to form a tungsten bulk layer on the tungsten nucleation layer within the vias during a chemical vapor deposition process; and
flowing the processing gas until the vias are filled with the tungsten bulk layer.
16. The method of claim 15 , wherein the boron-containing gas comprises diborane.
17. The method of claim 16 , wherein the tungsten-containing gas comprises tungsten hexafluoride.
18. The method of claim 17 , wherein the substrate is exposed to argon gas prior to sequentially exposing the substrate to the boron-containing gas and the tungsten-containing gas.
19. The method of claim 15 , wherein the tungsten nucleation layer is deposited on a barrier layer disposed within the vias on the substrate.
20. The method of claim 19 , wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, and combinations thereof.
21. The method of claim 15 , wherein the tungsten nucleation layer is deposited on a silicon-containing layer disposed on the substrate.
22. The method of claim 21 , wherein the silicon-containing layer comprises silicon oxide.
23. The method of claim 15 , wherein the processing gas further comprises a reactive precursor gas.
24. The method of claim 23 , wherein the reactive precursor gas comprises a gas selected from the group consisting of silane, hydrogen, argon, and combinations thereof.
25. The method of claim 15 , wherein the vias comprises aspect ratios of about 6:1.
26. A method for forming a tungsten-containing material on a substrate, comprising:
transferring a substrate to a first processing position within a processing system;
forming a tungsten nucleation layer by sequentially exposing the substrate to a boron-containing gas and a tungsten-containing gas at the first processing position during an atomic layer deposition process;
transferring the substrate to a second processing position within the processing system; and
forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas comprising the tungsten-containing gas and a reactive precursor gas at the second processing position during a chemical vapor deposition process.
27. The method of claim 26 , wherein the boron-containing gas comprises diborane.
28. The method of claim 27 , wherein the tungsten-containing gas comprises tungsten hexafluoride.
29. The method of claim 28 , wherein the substrate is exposed to argon gas prior to sequentially exposing the substrate to the boron-containing gas and the tungsten-containing gas.
30. The method of claim 26 , wherein the tungsten nucleation layer is deposited on a barrier layer disposed on the substrate.
31. The method of claim 30 , wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, and combinations thereof.
32. The method of claim 26 , wherein the tungsten nucleation layer is deposited on a silicon-containing layer disposed on the substrate.
33. The method of claim 32 , wherein the silicon-containing layer comprises silicon oxide.
34. The method of claim 26 , wherein the reactive precursor gas comprises a gas selected from the group consisting of silane, hydrogen, argon, and combinations thereof.
35. A method for forming a tungsten-containing material on a substrate, comprising:
transferring a substrate to a first processing position within a processing system;
exposing the substrate to tungsten hexafluoride for a predetermined time at the first processing position;
depositing a first tungsten-containing layer on the substrate by sequentially exposing the substrate to the tungsten hexafluoride and a reactive precursor gas during an atomic layer deposition process;
transferring the substrate to a second processing position within the processing system; and
depositing a second tungsten-containing layer on the first tungsten-containing layer by exposing the substrate to the tungsten hexafluoride and another reactive precursor gas during a vapor deposition process.
36. The method of claim 35 , wherein the reactive precursor gas comprises a nitrogen-containing gas.
37. The method of claim 35 , wherein first tungsten-containing layer is deposited at the first processing position.
38. The method of claim 35 , wherein the predetermined time is within a range from about 0.01 seconds to about 15 seconds.