Group II-VI semiconductor devices
View Patent ↗Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 10 16 atoms·cm −3 , the semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm 2 /V·s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.
1. A solid state device comprising a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material, wherein the p-type group II-VI semiconductor comprises a single crystal thin film of a group II-VI semiconductor comprising atoms of group II elements and atoms of group VI elements, wherein the group II-VI semiconductor is doped with one or more p-type dopants selected from nitrogen, phosphorus, arsenic, antimony, bismuth, copper, and chalcogenides of the foregoing, and mixtures thereof, wherein the p-type dopant concentration in the group II-VI semiconductor is greater than about 10 16 atoms·cm −3 , wherein semiconductor resistivity is less than about 0.5 ohm·cm, and wherein the carrier mobility is greater than about 0.1 cm 2 /V·s, and wherein the p-type group II-VI semiconductor material has a luminescent peak at 3.357 eV.
2. A solid state device according to claim 1 , wherein the group II elements are selected from zinc, cadmium, alkaline earth metals, and mixtures thereof.
3. A solid state device according to claim 1 , wherein the group VI elements are selected from oxygen, sulfur, selenium, tellurium, and mixtures thereof.
4. A solid state device according to claim 1 , wherein the p-type dopant is phosphorus.
5. A solid state device according to claim 1 , wherein the p-type dopant is arsenic.
6. A solid state device according to claim 1 , wherein the p-type dopant is antimony.
7. A solid state device according to claim 1 , wherein the p-type dopant is bismuth.
8. A solid state device according to claim 1 , wherein the thin film of a group II-VI semiconductor is deposited by a chemical deposition process selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes.
9. A solid state device according to claim 1 , wherein the group II-VI semiconductor material is zinc oxide.
10. A solid state device according to claim 1 , wherein the group II-VI semiconductor material is zinc sulfide.
11. A solid state device according to claim 1 , wherein the device is a light emitting diode.
12. A solid state device according to claim 1 , wherein the device is a laser diode.
13. A solid state device according to claim 1 , wherein the device is a field effect transistor.
14. A solid state device according to claim 1 , wherein the device is a photodetector.
15. A solid state device according to claim 1 , wherein the device emits light at a wavelength in the range from about 207 nm to 810 nm.
16. A solid state device according to claim 1 , wherein the device emits light at a wavelength of about 441.6 nm.
17. A solid state device according to claim 1 , wherein the device emits light at a wavelength of about 325 nm.
18. A solid state device according to claim 1 , wherein the group II-VI semiconductor material is disposed on an amorphous self supporting substrate surface.
19. A solid state device according to claim 1 , wherein the n-type semiconductor material is an n-type group II-VI semiconductor.
20. A solid state device comprising a p-n junction containing a p-type zinc oxide and an n-type semiconductor material, wherein the p-type zinc oxide comprises single crystal zinc oxide that is doped with one or more p-type dopants, wherein the p-type dopant concentration in the zinc oxide is greater than about 10 16 atoms·cm −3 , wherein semiconductor resistivity is less than about 0.5 ohm·cm, and wherein the carrier mobility is greater than about 0.1 cm 2 /V·s, and wherein the p-type zinc oxide semiconductor material has a luminescent peak at 4 3.357 eV.
21. A solid state device according to claim 20 , wherein the p-type dopant is phosphorus.
22. A solid state device according to claim 20 , wherein the p-type dopant is arsenic.
23. A solid state device according to claim 20 , wherein the p-type dopant is antimony.
24. A solid state device according to claim 20 , wherein the p-type dopant is bismuth.
25. A solid state device according to claim 20 , wherein the p-type dopant is copper.
26. A solid state device according to claim 20 , wherein the single crystal zinc oxide further comprises magnesium oxide.
27. A solid state device according to claim 20 , wherein the single crystal zinc oxide further comprises cadmium oxide.
28. A solid state device according to claim 20 , wherein the n-type semiconductor material is an n-type zinc oxide.
29. A solid state device according to claim 28 , wherein the n-type zinc oxide contains an n-type dopant selected from ions of Al, Ga, B, H, Yb and other rare earth elements, Y, Sc, and mixtures thereof.
30. A solid state device according to claim 20 , wherein the device is a light emitting diode.
31. A solid state device according to claim 20 , wherein the device is a laser diode.
32. A solid state device according to claim 20 , wherein the device is a field effect transistor.
33. A solid state device according to claim 20 , wherein the device is a photodetector.
34. A solid state device according to claim 20 , wherein the device emits light at a wavelength in the range from about 310 nm to 660 nm.
35. A solid state device according to claim 20 , wherein the device emits light at a wavelength of about 441.6 nm.
36. A solid state device according to claim 20 , wherein the device emits light at a wavelength of about 325 nm.
37. A solid state device according to claim 20 , wherein the single crystal zinc oxide is disposed on an amorphous self supporting substrate surface.
38. A solid state device according to claim 37 , further comprising a barrier layer disposed between the single crystal zinc oxide and the amorphous self supporting substrate surface.
39. A solid state device comprising a p-n junction containing a p-type zinc oxide and an n-type semiconductor material, wherein the p-type zinc oxide comprises single crystal zinc oxide that is doped with a quantity of phosphorous, wherein the phosphorous dopant concentration in the zinc oxide is greater than about 10 16 atoms·cm −3 , wherein semiconductor resistivity is less than about 0.5 ohm·cm, and wherein the caffier mobility is greater than about 0.1 cm 2 /V·s, and wherein the p-type zinc oxide semiconductor material has a luminescent peak at 4 3.357 eV
40. A solid state device according to claim 39 , wherein the p-type zinc oxide further comprises magnesium oxide.
41. A solid state device according to claim 39 , wherein the p-type zinc oxide further comprises cadmium oxide.