Method of forming thin film for improved productivity
There is provided a method of forming a thin film for providing improved fabrication productivity. The method includes introducing a semiconductor substrate into a process chamber. A process thin film is formed on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed. The semiconductor substrate is removed from the process chamber. A stress relief layer is formed on the chamber coating layer. After all of the above operations are repeatedly performed at least one time, an in-situ cleaning is performed on the chamber coating layer and the stress relief layer, which are alternately formed in stack on the inner walls of the process chamber.
1. A method of forming a thin film comprising:
a) introducing a semiconductor substrate into a process chamber;
b) forming a process thin film on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed, wherein the process thin film and the chamber coating layer are dielectric layers;
c) removing the semiconductor substrate from the process chamber; and
d) after removing the semiconductor substrate from the process chamber, forming a stress relief layer on the chamber coating layer on the inner walls of the process chamber.
2. The method according to claim 1 , wherein the stress relief layer is formed of a material layer having an etch rate being higher than that of the chamber coating layer.
3. The method according to claim 1 , wherein the stress relief layer is formed of an amorphous layer having an etch rate higher than that of the chamber coating layer.
4. The method according to claim 3 , wherein the stress relief layer is formed with a thickness of 1 Ř100 Å.
5. The method according to claim 3 , wherein if the chamber coating layer is a hafnium oxide layer, the stress relief layer is a carbon rich hafnium oxide layer.
6. The method according to claim 3 , wherein if the chamber coating layer is a hafnium oxide layer, the stress relief layer is a tantalum oxide layer.
7. The method according to claim 6 , wherein the hafnium oxide layer and the tantalum oxide layer are formed using an ALD method.
8. The method according to claim 1 , wherein the stress relief layer is a nitrified surface layer.
9. The method according to claim 8 , wherein forming the nitrified surface layer comprises plasma-treating the surface of the chamber coating layer for nitrification in the presence of an atmosphere gas containing nitrogen.
10. The method according to claim 9 , wherein the atmosphere gas containing nitrogen comprises at least one of N 2 , N 2 O 2 , and N 2 O.
11. The method according to claim 8 , wherein the process thin film and the chamber coating layer are hafnium oxide layers formed using an ALD method.
12. A method of forming a thin film comprising:
a) introducing a semiconductor substrate into a process chamber;
b) forming a process thin film on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed, wherein the process thin film and the chamber coating layer are dielectric layers;
c) removing the semiconductor substrate from the process chamber;
d) after removing the semiconductor substrate from the process chamber, forming a stress relief layer on the chamber coating layer on the inner walls of the process chamber; and
e) repeatedly performing the steps a) to d) at least one time.
13. The method according to claim 12 , wherein the stress relief layer is formed of a material layer having an etch rate higher than that of the chamber coating layer.
14. The method according to claim 12 , wherein the stress relief layer is formed of an amorphous layer having an etch rate higher than that of the chamber coating layer.
15. The method according to claim 14 , wherein the process thin film and the chamber coating layer are hafnium oxide layers, and the stress relief layer is a tantalum oxide layer.
16. The method according to claim 12 , wherein the stress relief layer is a nitrified surface layer.
17. The method according to claim 16 , wherein forming the nitrified surface layer comprises plasma-treating the surface of the chamber coating layer for nitrification in the presence of an atmosphere gas containing nitrogen.
18. A method of forming a thin film comprising:
a) introducing a first semiconductor substrate into a process chamber;
b) forming a first process thin film on the first semiconductor substrate, in which a first chamber coating layer is formed on inner walls of the process chamber while the first process thin film is formed;
c) removing the first semiconductor substrate from the process chamber;
d) after removing the first semiconductor substrate from the process chamber, forming a first stress relief layer on the chamber coating layer on the inner walls of the process chamber;
e) introducing a second semiconductor substrate into the process chamber;
f) forming a second process thin film on the second semiconductor substrate, in which a second chamber coating layer is formed on the first stress relief layer of the process chamber while the second process thin film is formed;
g) removing the second semiconductor substrate from the process chamber; and
h) after removing the second semiconductor substrate from the process chamber, removing the first chamber coating layer, the first stress relief layer, and the second chamber coating layer that are alternatively formed in a stack on the inner walls of the process chamber by in-situ cleaning.
19. The method according to claim 18 , wherein the in-situ cleaning is performed by a dry etch using a plasma.
20. The method according to claim 19 , wherein the dry etch using a plasma uses a gas selected from the group consisting of BCl 3 , Cl 2 , ClF 3 , CHF 3 , CF 4 , O 2 , Ar and He, and a mixture thereof.
21. The method according to claim 18 , wherein at least one of the first and second chamber coating layers is a hafnium oxide layer.
22. The method according to claim 18 further comprising forming a second stress relief layer on the second chamber coating layer, wherein the second stress relief layer is removed from the process chamber by in-situ cleaning.
23. A method of forming a thin film comprising:
a) introducing a semiconductor substrate into a process chamber;
b) forming a process thin film on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed, c) removing the semiconductor substrate from the process chamber;
d) after removing the semiconductor substrate from the process chamber, forming a stress relief layer on the chamber coating layer on the inner walls of the process chamber, wherein the stress relief layer is formed of an amorphous layer having an etch rate higher than that of the chamber coating layer, and wherein the process thin film and the chamber coating layer are hafnium oxide layers, and the stress relief layer is a tantalum oxide layer; and
e) repeatedly performing the steps a) to d) at least one time.
24. A method of forming a thin film comprising:
a) introducing a semiconductor substrate into a process chamber;
b) forming a process thin film on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed, wherein the process thin film and the chamber coating layer are dielectric layers;
c) removing the semiconductor substrate from the process chamber; and
d) forming a stress relief layer on the chamber coating layer, wherein the stress relief layer is formed of an amorphous layer having an etch rate higher than that of the chamber coatinglayer, wherein if the chamber coating layer is a hafnium oxide layer, the stress relief layer is a carbon rich hafnium oxide layer.