Filling small dimension vias using supercritical carbon dioxide
Suitable particles may be deposited within an extremely small high-aspect ratio via by flowing the particles in a suspension using supercritical carbon dioxide. The particles may be made up of diblock copolymers or silesquioxane-based materials or oligomers of phobic homopolymers or pre-formed silica-based particles stabilized using diblock copolymers and may include chemical initiators to permit in situ polymerization within the via.
1. A semiconductor structure comprising:
an interlayer dielectric;
a via contained in said interlayer dielectric; and
a plurality of particles suspendable in supercritical carbon dioxide deposited in said via, said particles including fluorocarbon.
2. The structure of claim 1 wherein said particles include monomers.
3. The structure of claim 1 wherein said particles include oligomers.
4. The structure of claim 1 wherein said particles include siloxanes.
5. The structure of claim 2 wherein said particles arc stabilized using diblock copolymers.
6. The structure at claim 1 including a dye in said via.
7. The structure of claim 1 wherein said via is less than about 45 nanometers.
8. The structure of claim 1 wherein said particles include a polymerization initiator.
9. A semiconductor structure comprising:
an interlayer dielectric;
a via formed in said interlayer dielectric;
a plurality of particles deposited in said via, said particles including a polymerization initiator.
10. The structure of claim 9 wherein said particles are suspendable in supercritical carbon dioxide.
11. The structure of claim 9 wherein said particles include monomers.
12. The structure of claim 9 wherein said particles include oligomers.
13. The structure of claim 9 wherein said particles include fluorocarbons.
14. The structure of claim 10 wherein said particles are stabilized using diblock copolymers.
15. The structure of claim 9 wherein said via is less than about 45 nanometers.