Air-gap type FBAR, and duplexer using the FBAR
An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.
1. An air-gap type film bulk acoustic resonator (FBAR), comprising:
a substrate having a cavity in an upper surface of the substrate;
a first dielectric layer on the upper surface of the substrate around the cavity, the first dielectric layer at least partially defining an entrance to and exposing a surface of the cavity; and
a resonance part including:
a first electrode on part of the first dielectric layer,
a second electrode on the first dielectric layer, exclusive of the first electrode, and
a piezoelectric layer between the first and second electrodes,
wherein at least a portion of the piezoelectric layer extends along a same plane as the first dielectric layer that is substantially parallel to the substrate.
2. The FBAR as claimed in claim 1 , further comprising a conductive layer on a bottom surface of the cavity.
3. The FBAR as claimed in claim 1 , further comprising an element integrated onto a bottom surface of the cavity.
4. The FBAR as claimed in claim 3 , wherein the element includes at least one of a passive element and an active element.
5. The FBAR as claimed in claim 1 , wherein the resonance part is on a second substrate.
6. The FBAR as claimed in claim 5 , further comprising a second dielectric layer between the resonance part and the substrate, the second dielectric layer being on the second substrate.
7. The FBAR as claimed in claim 1 , further comprising a second dielectric layer on the resonance part.
8. The FBAR as claimed in claim 7 , further comprising a substrate film of a predetermined thickness on the second dielectric layer.
9. The FBAR as claimed in claim 8 , further comprising:
a third dielectric layer on a portion of a surface of the substrate film; and
a third substrate contacting the third dielectric layer, the third substrate including a cavity formed apart from where the third substrate contacts the third dielectric layer.
10. The FBAR as claimed in claim 1 , further comprising a via exposing a pad for providing electrical contact with one of the first and second electrodes.
11. A single-chip duplexer having an air-gap type film bulk acoustic resonator (FBAR) filter, comprising:
a substrate having first and second cavities formed on an upper surface of the substrate;
a first dielectric layer deposited on the upper surface of the substrate around the first and second cavities;
a first air-gap type FBAR including a first resonance part over the first cavity;
a second air-gap type FBAR including a second resonance part over the second cavity; and
an isolation part between the first air-gap type FBAR and the second air-gap type FBAR, wherein each of the first and second resonance parts includes:
a lower electrode;
an upper electrode; and
a piezoelectric layer formed between the lower electrode and the upper electrode over each of the first and second cavities, wherein at least a portion of the piezoelectric layer extends along a same plane as the first dielectric layer that is substantially parallel to the substrate.
12. The duplexer as claimed in claim 11 , wherein:
each of the lower electrodes is on an upper surface of the first dielectric layer on one side of the respective first and second cavity and extends over the respective one of the first and second cavities; and
each of the upper electrodes is on the upper surface of the first dielectric layer on an opposite side of the respective one of the first and second cavities and extends over the respective one of the first and second cavities.
13. The duplexer as claimed in claim 11 , wherein the first air-gap type FBAR serves as a transmitter filter and the second air-gap type FBAR serves as a receiver filter.
14. The duplexer as claimed in claim 13 , wherein the transmitter filter and the receiver filter are implemented by connecting more than one air-gap type FBARs.
15. The duplexer as claimed in claim 13 , wherein the isolation part includes a capacitor and an inductor, and introduces a phase difference between frequencies of signals input to the transmitter filter and the receiver filter.
16. The duplexer as claimed in claim 11 , wherein the isolation part includes:
a second dielectric layer on the substrate;
a first conductive layer on part of the upper surface of the second dielectric layer;
a third dielectric layer on part of the first conductive layer and on part of the upper surface of the second dielectric layer;
a second conductive layer on part of the third dielectric layer over the first conductive layer and on part of the third dielectric layer below which the first conductive layer is not present;
an insulating film on part of the second conductive layer and on an upper part of the third dielectric layer; and
a conductive coil on an upper part of the insulating film and on upper parts of exposed first and second conductive layers.
17. The duplexer as claimed in claim 11 , further comprising:
first and second dielectric portions spaced apart from each other at a distance corresponding to a distance between the first and second resonance parts.
18. The duplexer as claimed in claim 11 , wherein the isolation part comprises:
a capacitor; and
an inductor on an upper part of the capacitor.
19. The duplexer as claimed in claim 11 , further comprising a via exposing a pad for providing electrical contact with the lower and upper electrodes of the first and second resonance parts.
20. The duplexer as claimed in claim 11 , wherein the first and second resonance parts are on a second substrate.