Data output driver that controls slew rate of output signal according to bit organization
A data output driver of a semiconductor memory device can minimize a difference in slew rate of an output signal according to a selected bit organization. The data output driver includes a pull-up driver and a pull-down driver. The pull-up driver pulls up an output terminal and the pull-down driver pulls down the output terminal. In particular, current driving capabilities of the pull-up driver and/or the pull-down driver are changed in response to bit organization information signals of the semiconductor memory device.
1. A data output driver of a semiconductor memory device, which drives an output terminal and comprises:
a pull-up driver, which pulls up the output terminal; and
a pull-down driver, which pulls down the output terminal,
wherein current driving capabilities of at least one of the pull-up driver and/or the pull-down driver are changed in response to a selected bit organization among a plurality of available bit organizations of the semiconductor memory device.
2. The data output driver of claim 1 , wherein the pull-up driver comprises:
a pull-up transistor, which is controlled by a pull-up driving signal and is connected between a supply voltage and the output terminal; and
a logic gate, which inverts input data and generates a pull-up driving signal,
wherein a current driving capability of the logic gate is changed in response to the selected bit organization.
3. The data output driver of claim 2 , wherein the pull-down driver comprises:
a pull-down transistor, which is controlled by a pull-down driving signal and is connected between the output terminal and a ground voltage; and
a second logic gate, which inverts the input data and generates the pull-down driving signal,
wherein a current driving capability of the second logic gate is changed in response to the selected bit organization.
4. The data output driver of claim 1 , wherein the pull-down driver comprises:
a pull-down transistor, which is controlled by a pull-down driving signal and is connected between the output terminal and a ground voltage; and
a logic gate, which inverts data and generates the pull-down driving signal,
wherein a current driving capability of the logic gate is changed in response to the selected bit organization.
5. The data output driver of claim 1 , wherein the at least one of the pull-up driver and the pull-down driver is adapted to receive at least one bit organization signal and to change its current driving capability in response to the at least one bit organization signal.
6. The data output driver of claim 5 , wherein the pull-up driver comprises:
a pull-up transistor, which is controlled by a pull-up driving signal and is connected between a supply voltage and the output terminal; and
a logic gate, which inverts input data and generates a pull-up driving signal,
wherein a current driving capability of the logic gate is changed in response to the at least one bit organization signal.
7. The data output driver of claim 6 , wherein the logic gate comprises:
a first PMOS transistor, which is connected between an output terminal of the logic gate and an internal node and is gated by input data;
a resistor, which is connected between the internal node and the supply voltage; and
at least one second PMOS transistor, which is connected between the internal node and the supply voltage and is gated by the bit organization information signals.
8. The data output driver of claim 7 , wherein the logic gate further comprises:
a first NMOS transistor, which is connected between the output terminal of the logic gate and a second internal node and is gated by the input data;
a resistor, which is connected between the second internal node and a ground voltage; and
at least one second NMOS transistor, which is connected between the second internal node and the ground voltage and is gated by the bit organization information signals.
9. The data output driver of claim 6 , wherein the logic gate further comprises:
a first NMOS transistor, which is connected between an output terminal of the logic gate and an internal node and is gated by input data;
a resistor, which is connected between the internal node and a ground voltage; and
at least one second NMOS transistor, which is connected between the internal node and the ground voltage and is gated by the bit organization information signals.
10. The data output driver of claim 6 , wherein the pull-down driver comprises:
a pull-down transistor, which is controlled by a pull-down driving signal and is connected between the output terminal and a ground voltage; and
a second logic gate, which inverts data and generates the pull-down driving signal,
wherein a current driving capability of the second logic gate is changed in response to the at least one bit organization signal.
11. The data output driver of claim 10 , wherein the second logic gate comprises:
a first PMOS transistor, which is connected between an output terminal of the second logic gate and is gated by input data;
a resistor, which is connected between the internal node and a supply voltage; and
at least one second PMOS transistor, which is connected between the internal node and the supply voltage and is gated by the bit organization information signals.
12. The data output driver of claim 11 , wherein the second logic gate comprises:
a first NMOS transistor, which is connected between the output terminal of the second logic gate and a second internal node and is gated by the input data;
a resistor, which is connected between the second internal node and the ground voltage; and
at least one second NMOS transistor, which is connected between the second internal node and the ground voltage and is gated by the bit organization information signals.
13. The data output driver of claim 10 , wherein the second logic gate comprises:
a first NMOS transistor, which is connected between an output terminal of the second logic gate and an internal node and is gated by input data;
a resistor, which is connected between the internal node and the ground voltage; and
at least one second NMOS transistor, which is connected between the internal node and the ground voltage and is gated by each of the bit organization information signals.
14. The data output driver of claim 5 , wherein the pull-down driver comprises:
a pull-down transistor, which is controlled by a pull-down driving signal and is connected between the output terminal and a ground voltage; and
a logic gate, which inverts data and generates the pull-down driving signal,
wherein a current driving capability of the logic gate is changed in response to the at least one bit organization signal.
15. The data output driver of claim 14 , wherein the second logic gate comprises:
a first PMOS transistor, which is connected between an output terminal of the logic gate and is gated by input data;
a resistor, which is connected between the internal node and a supply voltage; and
at least one second PMOS transistor, which is connected between the internal node and the supply voltage and is gated by the bit organization information signals.
16. The data output driver of claim 15 , wherein the second logic gate comprises:
a first NMOS transistor, which is connected between the output terminal of the logic gate and a second internal node and is gated by the input data;
a resistor, which is connected between the second internal node and the ground voltage; and
at least one second NMOS transistor, which is connected between the second internal node and the ground voltage and is gated by the bit organization information signals.
17. The data output driver of claim 14 , wherein the logic gate comprises:
a first NMOS transistor, which is connected between an output terminal of the logic gate and an internal node and is gated by input data;
a resistor, which is connected between the internal node and the ground voltage; and
at least one second NMOS transistor, which is connected between the internal node and the ground voltage and is gated by each of the bit organization information signals.