Method for preparing Ge
View Patent ↗A process for is provided for synthesizing a compound having the formula E(GeH 3 ) 3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH 3 Br and [CH 3 ) 3 Si] 3 E are combined under conditions whereby E(GeH 3 ) 3 is obtained. The E(GeH 3 ) 3 is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH 3 ) 3 can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.
1. A method for synthesizing a compound having the formula E(GeH 3 ) 3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P), the method comprising combining GeH 3 Br with [(CH 3 ) 3 Si] 3 E under conditions whereby E(GeH 3 ) 3 is obtained.
2. The method of claim 1 further comprising purifying the obtained E(GeH 3 ) 3 .
3. The method of claim 1 wherein the step of purifying the obtained E(GeH 3 ) 3 comprises trap-to-trap fractionation.
4. The method of claim 1 wherein E(GeH 3 ) 3 is obtained with a yield from about 70% to about 76%.
5. A method for synthesizing a compound having the formula E(GeH 3 ) 3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P), the method comprising combining GeH 3 Br with [(CH 3 ) 3 Si] 3 E to obtain E(GeH 3 ) 3 according to the formula:
3 GeH 3 Br+[(CH 3 ) 3 Si)] 3 E→3(CH 3 ) 3 SiBr+(GeH 3 )3E
6. The method of claim 5 further comprising purifying the obtained E(GeH 3 ) 3 .
7. The method of claim 5 wherein the step of purifying the obtained E(GeH 3 ) 3 comprises trap-to-trap fractionation.
8. The method of claim 5 wherein E(GeH 3 ) 3 is obtained with a yield from about 70% to about 76%.
9. A method for doping a region of a semiconductor material in a chemical vapor deposition reaction chamber, the method comprising introducing into the chamber a gaseous precursor having the formula E(GeH 3 ) 3 , wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).
10. The method of claim 9 wherein the semiconductor material comprises silicon (Si).
11. The method of claim 9 wherein the semiconductor material comprises germanium (Ge).
12. The method of claim 9 wherein the semiconductor material comprises SiGeSn.
13. The method of claim 9 wherein the semiconductor material comprises SnGe.
14. A method for depositing a doped epitaxial Ge—Sn layer on a substrate in a chemical vapor deposition reaction chamber, the method comprising:
introducing into the chamber a gaseous precursor comprising SnD 4 mixed in H 2 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate; and
introducing into the chamber a gaseous precursor having the formula E(GeH 3 ) 3 , wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).
15. The method of claim 14 wherein the gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C.
16. The method of claim 14 wherein the substrate comprises silicon.
17. The method of claim 14 wherein the silicon comprises Si(100).
18. The method of claim 14 wherein the Ge—Sn layer comprises Sn x Ge 1-x and x is in a range from about 0.02 to about 0.20.
19. A method for forming a Group IV semiconductor film, the method comprising
forming the Group IV semiconductor film by a chemical vapor deposition method, wherein the Group IV semiconductor film is doped with impurities comprising an element E at a concentration ranging from about 10 21 atoms/cm 3 to about several percent using a precursor having the formula E(GeH 3 ) 3 wherein E is selected from the group consisting of arsenic (As), phosporous (P) and antimony (Sb).
20. A method for forming a Group IV semiconductor film, the method comprising:
forming the Group IV semiconductor film by a chemical vapor deposition method; and
while forming the Group IV semiconductor film, doping the film with impurities comprising an element B at a concentration ranging from about 10 21 atoms/cm 3 to about 3 at. % using a precursor having the formula E(GeH 3 ) 3 wherein B is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).
21. The method for forming a Group IV semiconductor film according to claim 20 , wherein arsenic (As), antimony (Sb) and phosphorus (P) are added to the Group IV semiconductor film by diffusion methods.
22. The method for forming a Group IV semiconductor film according to claim 20 , wherein the doping step comprises introducing into a reaction chamber the precursor having the formula E(GeH 3 ) 3 and a reactant comprising SnD 4 , GeH 4 or Ge 2 H 6 .
23. A method of preparing (E)H x (GeH 3 ) 3-x, where x=1 or 2 and E is selected from the group consisting of P, As, Sb, the method comprising reacting inorganic or organometallic compounds of the E element with an alkali germyl or a halogenated germane.
24. The method of preparing (E)H x (GeH 3 ) 3-x according to claim 23 wherein the alkali germyl comprises KGeH 3 .
25. The method of preparing (R)H x (GeH 3 ) 3-x according to claim 23 wherein the halogenated germane comprises BrGeH 3 .