Method and apparatus for selective deposition
A method for selectively depositing a source material on a wafer is disclosed. In one embodiment, a wafer is having at least one recessed feature is provided. A top surface of the wafer is then coated with an inhibiting material. Finally, a source material is selectively deposited in the at least one recessed feature, the source material repelled by the inhibiting material. In another embodiment, the inhibiting material is one of a wax, a surfactant or an oil.
1. A method of forming a semiconductor structure comprising:
forming an ILD layer above a substrate, wherein said ILD layer has a top surface;
forming a trench in said ILD layer, wherein said trench has a bottom surface and a sidewall surface;
depositing a seed layer above said top surface of said ILD layer and above said bottom surface and said sidewall surface of said trench;
depositing an inhibiting layer above the portion of said seed layer that is above said top surface of said ILD layer, but not above the portion of said seed layer that is above said bottom surface and said sidewall surface of said trench, wherein said inhibiting layer does not modify said seed layer, and wherein said inhibiting layer is comprised of a material selected from the group consisting of a wax, a grease, an oil or a surfactant; and
depositing a metal layer above the portion of said seed layer that is above said bottom surface and said sidewall surface of said trench, wherein said inhibiting layer prevents the deposition of said metal layer above the portion of said seed layer that is above said top surface of said ILD layer.
2. The method of claim 1 , wherein said ILD layer is comprised of a material selected from the group consisting of SiO 2 , carbon doped oxide, fluorosilicate glass, fluorinated silicon dioxide, carbon based polymers or silicon based polymers.
3. The method of claim 1 , wherein said seed layer comprises a conductive barrier layer.
4. The method of claim 3 , wherein said conductive barrier layer is comprised of a material selected from the group consisting of tantalum, tantalum nitride or ruthenium.
5. The method of claim 1 , wherein said inhibiting layer is comprised of a material selected from the group consisting of fluorine, silicone, polytetrafluoroethylene or a perfluoroalkylpolyether fluid.
6. The method of claim 5 , wherein said inhibiting layer has a thickness of less than 1 micron.
7. The method of claim 6 , wherein said inhibiting layer has a viscosity between 100 and 500,000 centipoise.
8. The method of claim 1 , wherein said metal layer is comprised of a material selected from the group consisting of copper, aluminum, silver, ruthenium or tantalum.
9. The method of claim 1 , wherein said ILD layer is comprised of a material with a dielectric constant of 4.0 or less.
10. A method of forming a semiconductor structure comprising:
forming an ILD layer above a substrate, wherein said ILD layer has a top surface;
forming a trench in said ILD layer, wherein said trench has a bottom surface and a sidewall surface;
depositing a seed layer above said top surface of said ILD layer and above said bottom surface and said sidewall surface of said trench;
depositing an inhibiting layer above the portion of said seed layer that is above said top surface of said ILD layer, but not above the portion of said seed layer that is above said bottom surface and said sidewall surface of said trench, wherein said inhibiting layer does not modify said seed layer, and wherein said inhibiting layer is comprised of a material selected from the group consisting of a wax, a grease, an oil or a surfactant;
depositing a metal layer above the portion of said seed layer that is above said bottom surface and said sidewall surface of said trench, wherein said inhibiting layer prevents the deposition of said metal layer above the portion of said seed layer that is above said top surface of said ILD layer; and
removing said inhibiting layer and the portion of said seed layer that is above said top surface of said ILD layer.
11. The method of claim 10 , wherein said ILD layer is comprised of a material selected from the group consisting of SiO 2 , carbon doped oxide, fluorosilicate glass, fluorinated silicon dioxide, carbon based polymers or silicon based polymers.
12. The method of claim 10 , wherein said seed layer comprises a conductive barrier layer.
13. The method of claim 12 , wherein said conductive barrier layer is comprised of a material selected from the group consisting of tantalum, tantalum nitride or ruthenium.
14. The method of claim 10 , wherein said inhibiting layer is comprised of a material selected from the group consisting of fluorine, silicone, polytetrafluoroethylene or a perfluoroalkylpolyether fluid.
15. The method of claim 14 , wherein said inhibiting layer has a thickness of less than 1 micron.
16. The method of claim 15 , wherein said inhibiting layer has a viscosity between 100 and 500,000 centipoise.
17. The method of claim 10 , wherein said metal layer is comprised of a material selected from the group consisting of copper, aluminum, silver, ruthenium or tantalum.
18. The method of claim 10 , wherein removing said inhibiting layer comprises a mechanical process.
19. The method of claim 10 , wherein said ILD layer is comprised of a material with a dielectric constant of 4.0 or less.
20. A method of forming a semiconductor structure comprising:
forming an ILD layer above a substrate, wherein said ILD layer has a top surface;
forming a trench in said ILD layer, wherein said trench has a bottom surface and a sidewall surface;
depositing a seed layer above said top surface of said ILD layer and above said bottom surface and said sidewall surface of said trench, wherein said seed layer is comprised of ruthenium;
depositing an inhibiting layer above the portion of said seed layer that is above said top surface of said ILD layer, but not above the portion of said seed layer that is above said bottom surface and said sidewall surface of said trench, wherein said inhibiting layer does not modify said seed layer;
depositing a metal layer above the portion of said seed layer that is above said bottom surface and said sidewall surface of said trench, wherein said inhibiting layer prevents the deposition of said metal layer above the portion of said seed layer that is above said top surface of said ILD layer; and
removing said inhibiting layer and the portion of said seed layer that is above said top surface of said ILD layer, wherein removing the portion of said seed layer that is above said top surface of said ILD layer comprises etching with a periodic acid solution.
21. The method of claim 20 , wherein said inhibiting layer is comprised of a material selected from the group consisting of perfluoropolyether oil, grease or a perfluorocarbon fluid, and wherein removing said inhibiting layer comprises washing with trichlorotrifluoroethane.
22. A method of forming a semiconductor structure comprising:
forming an ILD layer above a substrate, wherein said ILD layer has a top surface;
forming a trench in said ILD layer, wherein said trench has a bottom surface and a sidewall surface;
depositing a seed layer above said top surface of said ILD layer and above said bottom surface and said sidewall surface of said trench;
depositing an inhibiting layer above the portion of said seed layer that is above said top surface of said ILD layer, but not above the portion of said seed layer that is above said bottom surface and said sidewall surface of said trench, wherein said inhibiting layer is comprised of a material selected from the group consisting of a wax, a grease, an oil or a surfactant; and
depositing a metal layer above the portion of said seed layer that is above said bottom surface and said sidewall surface of said trench, wherein said inhibiting layer prevents the deposition of said metal layer above the portion of said seed layer that is above said top surface of said ILD layer.
23. The method of claim 22 , wherein said ILD layer is comprised of a material selected from the group consisting of SiO 2 , carbon doped oxide, fluorosilicate glass, fluorinated silicon dioxide, carbon based polymers or silicon based polymers.
24. The method of claim 22 , wherein said seed layer comprises a conductive barrier layer.
25. The method of claim 24 , wherein said conductive barrier layer is comprised of a material selected from the group consisting of tantalum, tantalum nitride or ruthenium.
26. The method of claim 22 , wherein said inhibiting layer is comprised of a material selected from the group consisting of fluorine, silicone, polytetrafluoroethylene or a perfluoroalkylpolyether fluid.
27. The method of claim 26 , wherein said inhibiting layer has a thickness of less than 1 micron.
28. The method of claim 27 , wherein said inhibiting layer has a viscosity between 100 and 500,000 centipoise.
29. The method of claim 22 , wherein said metal layer is comprised of a material selected from the group consisting of copper, aluminum, silver, ruthenium or tantalum.