Organosilicate polymer and insulating film therefrom

1. A process for manufacturing an insulating film for a semiconductor device, comprising the steps of

A) preparing a composition for forming an insulating film, comprising

a) an organosilicate polymer prepared by a process comprising the steps of

i) providing an organometallic silane compound represented by Chemical Formula 1 below;

ii) causing a Grignard reaction of

the organometallic silane compound alone, or

the organometallic silane compound and a silane compound or silane oligomer to prepare a carbon-bridged silane oligomer and remove metal compound by-products; and

iii) mixing the carbon-bridged silane oligomer in organic solvent, and adding water and a catalyst thereto to cause hydrolysis and condensation to prepare an organosilicate polymer; and

b) an organic solvent;

B) coating the composition on a substrate of a semiconductor device to prepare a coated insulating film; and

C) drying and curing the coated insulating film:

R 1 p R 2 3-p SiR 3 MX  Chemical Formula 1

 wherein

R 1 is independently hydrogen, fluorine, aryl, vinyl, allyl, or fluorine-substituted or unsubstituted linear or branched C 1-4 alkyl;

R 2 is independently chlorine, acetoxy, hydroxy, or linear or branched C 1-4 alkoxy;

R 3 is C 1-6 hydrocarbon;

M is magnesium, mercury, or copper;

X is halogen; and

p is an integer of 0 to 2.

2. The process for manufacturing an insulating film for a semiconductor device according to claim 1 , wherein the i) organometallic silane compound is prepared by

1) introducing metal into a reaction vessel and drying it; and

2) adding an organic solvent and silane compound represented by the following Chemical Formula 2 to the reaction vessel and reacting them:

R 1 p R 2 3-p SiR 3 X  Chemical Formula 2

 wherein

R 1 is independently hydrogen, fluorine, aryl, vinyl, allyl, or fluorine-substituted or unsubstituted linear or branched C 1-4 alkyl;

R 2 is independently chlorine, acetoxy, hydroxy, or linear or branched C 1-4 alkoxy;

R 3 is C 1-6 hydrocarbon;

M is magnesium, mercury, or copper;

X is halogen; and

p is an integer of 0 to 2.

3. The process for manufacturing an insulating film for a semiconductor device according to claim 1 , wherein the a) ii) silane compound or silane oligomer is a silane compound represented by the following Chemical Formula 3 or an oligomer thereof:

R 4 q R 5 4-q Si  Chemical Formula 3

 wherein

R 4 is independently hydrogen, fluorine, aryl, vinyl, allyl, or fluorine-substituted or unsubstituted linear or branched C 1-4 alkyl;

R 5 is independently chlorine, acetoxy, hydroxy, or linear or branched C 1-4 alkoxy; and

q is an integer of 0 to 3.

4. The process for manufacturing an insulating film according to claim 1 , wherein the A) composition further comprises one or more additives selected from a group consisting of organic molecules, organic polymer, organic dendrimer, colloidal silica, aerosol, xerosol, and surfactant.

5. An insulating film for a semiconductor device prepared according to the process of claim 1 .

6. A semiconductor device comprising an insulating film according to claim 5 .