Method for manufacturing semiconductor device
View Patent ↗It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a peeling layer containing an element over a first substrate;
applying an organic resin film which is dissolved in a solvent over the peeling layer containing an element;
pasting a first two-sided tape over the organic resin film;
cutting off and removing a part of the first substrate;
pasting a second substrate to the first two-sided tape;
pasting a third substrate under the first substrate with a second two-sided tape;
performing peeling to separate the first substrate, the second two-sided tape, and the third substrate from the peeling layer;
pasting a fourth substrate to the peeling layer with an adhesive material.
2. A method according to claim 1 , wherein the part of the first substrate is in contact with a part of the organic resin film overlapped with the part of the first substrate.
3. A method for manufacturing a semiconductor device, comprising the steps of:
forming a peeling layer containing an element and an alignment marker over a first substrate;
forming an organic resin film which is dissolved in a solvent over the peeling layer containing an element;
pasting a first two-sided tape over the organic resin film;
cutting off and removing a part of the first substrate which is overlapped with the alignment marker;
pasting a second substrate to the first two-sided tape;
pasting a third substrate under the first substrate with a second two-sided tape;
performing peeling to separate the first substrate, the second two-sided tape, and the third substrate from the peeling layer;
pasting a fourth substrate to the peeling layer with an adhesive material.
4. A method for manufacturing a semiconductor device according to claim 1 or claim 3 , wherein the second substrate and the third substrate have higher rigidity than that of the first substrate, and the fourth substrate is a film substrate.
5. A method according to claim 1 or 3 , wherein said peeling is performed from a part where the part of the first substrate is cut off and removed.
6. A method according to claim 1 or 3 , further comprising steps of:
removing the second substrate;
removing the first two-sided tape; and
removing the organic resin film by dissolving with a solvent.
7. A method according to claim 1 or 3 , wherein said element is a TFT element.
8. A method according to claim 3 , wherein the part of the first substrate is in contact with a part of the organic resin film overlapped with the part of the first substrate.
9. A method for manufacturing a semiconductor device, comprising the steps of:
forming a peeling layer containing an element over a first substrate;
forming an organic resin film which is dissolved in a solvent over the peeling layer containing an element;
pasting a two-sided tape over the organic resin film;
cutting off and removing a part of the first substrate;
pasting a second substrate to the two-sided tape;
performing peeling to separate the first substrate from the peeling layer;
pasting a third substrate to the peeling layer with an adhesive material.
10. A method for manufacturing a semiconductor device according to claim 9 , wherein the second substrate has higher rigidity than that of the first substrate, and the third substrate is a film substrate.
11. A method according to claim 9 , wherein said peeling is performed from a part where the part of the first substrate is cut off and removed.
12. A method according to claim 9 , further comprising steps of:
removing the second substrate;
removing the two-sided tape; and
removing the organic resin film by dissolving with a solvent.
13. A method according to claim 9 , wherein said element is a TFT element.
14. A method according to claim 9 , wherein the part of the first substrate is in contact with a part of the organic resin film overlapped with the part of the first substrate.
15. A method for manufacturing a semiconductor device, comprising the steps of:
forming a peeling layer containing an element over a first substrate;
forming an organic resin film which is dissolved in a solvent over the peeling layer containing an element;
exposing a bonding face of a two-sided tape;
pasting the bonding face of the two-sided tape to the organic resin film;
cutting off and removing a part of the first substrate and exposing a part of the bonding face of the two-sided tape;
exposing the other bonding face of the two-sided tape by peeling a protective sheet;
pasting a second substrate to the other bonding face of the two-sided tape after peeling the protective sheet;
performing peeling to separate the first substrate from the peeling layer;
pasting a third substrate to the peeling layer with an adhesive material.
16. A method for manufacturing a semiconductor device according to claim 15 , wherein the second substrate has higher rigidity than that of the first substrate, and the third substrate is a film substrate.
17. A method according to claim 15 , wherein said peeling is performed from a part where the part of the first substrate is cut off and removed.
18. A method according to claim 15 , further comprising steps of:
removing the second substrate;
removing the two-sided tape; and
removing the organic resin film by dissolving with a solvent.
19. A method according to claim 15 , wherein the part of the first substrate is in contact with a part of the organic resin film overlapped with the part of the first substrate.
20. A method according to claim 15 , wherein said element is a TFT element.