Method and apparatus for a dual substrate package
A semiconductor die having a through via formed therein is disclosed. A first conductive layer is formed on the front side of the die and a second conductive layer is formed on the backside of the die, and coupled with the through via. A first package substrate is electrically coupled with the first conductive layer, and a second package substrate is electrically coupled with the second conductive layer. In another embodiment, a substrate ball electrically couples the first and second package substrates. In a further embodiment, a flip chip bump is attached to the first package substrate.
1. An apparatus, comprising:
a semiconductor die including active circuitry formed on a frontside and having a plurality of conductive through vias formed therein from the frontside to a backside, the die comprising a power requirement and an external signal requirement;
a plurality of first interconnects formed on a frontside of the die and a plurality of second interconnects formed on a backside of the die, respective ones of the plurality of second interconnects coupled to the plurality of through vias; and
a first package substrate electrically coupled to the plurality of first interconnects and a second package substrate electrically coupled to the plurality of second interconnects,
wherein a portion of at least one of the power requirement and the external signal requirement is supplied through the first package substrate and a remainder portion of at least one of the power requirement and the external signal requirement is supplied through the second package substrate.
2. The apparatus of claim 1 , further comprising a first underfill layer between the front side of the die and the first substrate and a second underfill layer between the backside of the die and the second substrate.
3. The apparatus of claim 1 , further comprising a substrate ball electrically coupled between the first and second substrates.
4. The apparatus of claim 1 , wherein the plurality of the first interconnects and the plurality of the second interconnects comprise solder balls.
5. The apparatus of claim 1 , wherein the semiconductor die is thinned using one selected from the group consisting of a backgrinding process, a chemical mechanical polishing (CMP) process, and a spin etching process.
6. The apparatus of claim 2 , wherein the underfill layers comprise a no-flow underfill material.
7. A method, comprising:
forming a plurality of conductive through vias in a back side of a semiconductor die including active circuitry on a frontside and coupling a plurality of first interconnects to respective ones of the plurality of through vias;
coupling a plurality of second interconnects to a frontside of the die;
electrically coupling the plurality of first interconnects to a first substrate; and
electrically coupling the plurality of second interconnects to a second substrate,
wherein a portion of at least one of a power requirement of the die and an external signal requirement of the die is supplied through the first substrate and a remainder portion of at least one of the power requirement and the external signal requirement is supplied through the second substrate.
8. The method of claim 7 , wherein the plurality of through vias connect with the device side.
9. The method of claim 7 , wherein the plurality of first interconnects and the plurality of second interconnects comprise solder balls.
10. The method of claim 7 , further comprising thinning the semiconductor die.
11. The method of claim 7 , wherein the first and second underfill layers comprise a no-flow underfill.
12. The method of claim 7 , further comprising:
dispensing a first underfill layer on the first package substrate; and
dispensing a second underfill layer on the backside of the semiconductor die.
13. The method of claim 12 , further comprising:
attaching a substrate ball between the first and second package substrates.
14. An apparatus comprising:
a die including device circuitry on a first side and a second side opposite the front side;
a plurality of contact points on the second side of the die; and
a plurality of conductive through vias coupling the device circuitry to the contact points,
wherein a portion of at least one of a power requirement and an external signal requirement of the die may be met through electrical connections to the contact points.
15. The apparatus of claim 14 , wherein the contact points comprise a first set of contact points, the apparatus further comprising a second set of contact points on the first side of the die and coupled to the device circuitry, wherein a remainder portion of at least one of the power requirement and the external signal requirement of the die may be met through electrical connections to the contact points.