Optoelectronic component with curved waveguide with inwardly sloped sides
The invention concerns semiconductor optoelectronic components with ribbon-shaped waveguide supported by a substrate. According to the invention the ribbon includes lateral sides and a light output face, characterized by said ribbon including a portion curved by more than two degrees in relation to the normal to the light output face, and the lateral sides being inwardly sloped on the substrate. The optoelectronic component may be an electro-optical modulator, a semiconductor optical amplifier, a semiconductor laser or a Mach-Zehnder-type interferometer. The component may also be formed by joining two of these devices.
1. A solid-state optoelectronic component with a waveguide in the form of a tape supported by a substrate which constitutes a layer of vertical optical confinement, the tape comprising:
a light emerging end,
side flanks sloping inwards on said substrate,
a section curved by more than two degrees in relation to the perpendicular to the light emerging end, wherein side flanks in said curve section have a larger slope angle than side flanks in a straight section of said tape,
a layer of optical confinement positioned above said substrate, and
a contact layer positioned above said layer of optical confinement, wherein side flanks in said curve section have a larger slope angle than side flanks in a straight section of said tape.
2. The optoelectronic component of claim 1 , wherein said curved section ends, at the emerging end of the waveguide, in a flared shape.
3. The opto electronic component of claim 1 , wherein said curved section is flare-shaped.
4. The optoelectronic component of claim 1 , wherein it constitutes a Mach-Zehnder type interferometer.
5. The optoelectronic component of claim 1 , wherein it is composed of the association of several elements selected from among an electro optical modulator, a solid-state optical amplifier, a semiconductor diode and a Mach-Zehnder type interferometer.
6. The optoelectronic component of claim 1 , wherein said vertical layer of optical confinement is a quaternary semiconductor and said contact layer is a ternary semiconductor.
7. The optoelectronic component of claim 1 , wherein it constitutes an electro optical modulator.
8. The optoelectronic component of claim 1 , wherein it constitutes a solid-state optical amplifier.
9. The optoelectronic component of claim 1 , wherein it constitutes a semiconductor diode.
10. A method for making a tape for an optoelectronic component, the method comprising:
placing a mask on a component, the component comprising a substrate, an optical containment layer, a contact layer, wherein the substrate and the contact layer comprises arsenic and the mask defines at least one straight portion and at least one curved portion;
removing a portion of the contact layer not protected by the mask by a ionic cleaning such that the component includes at least one straight portion and at least one curved portion, wherein the at least one curved portion is curved by more than two degrees in relation to the perpendicular to a light emerging end of the component; and
soaking the component in a hydriodic acid to form inwardly sloping side flanks on the optical containment layer, wherein side flanks in said curved portion has a larger slope angle than side flanks in the straight portion.
11. A method for making tape for a solid-state optoelectronic component with a waveguide in the form of a tape supported by a substrate comprising arsenic, the tape comprising a light emerging end, side flanks sloping inwards on said substrate, a section curved in relation to the perpendicular to the light emerging end, wherein hydrogen iodide is used to make said sloping side flanks, wherein side flanks in said curve section have a larger slope angle than side flanks in a straight section of said tape.
12. The method of claim 11 , wherein said substrate is an active layer.
13. The method of claim 12 for making said tape supported by said substrate, said tape forming a stacking of layers comprising at least, starting from said substrate, a side layer of optical confinement bearing no arsenic and a contact layer bearing arsenic, wherein:
a resin mask is photo-lithographically deposited on said contact layer, said resin mask materializing the path of said tape;
the part of said contact layer not positioned under said layer of resin is removed via ionic removal;
said side layer of optical confinement is chemically etched with a hydrogen iodide solution; and
said resin mask is removed.
14. The method of claim 13 , wherein said hydrogen iodide solution is pure hydrogen iodide.
15. The method of claim 13 , wherein said side layer of optical confinement is made of JnP.
16. The method of claim 11 , wherein said curved section slopes more than two degrees in relation to the perpendicular to the light emerging end.