IP Library Granted Patent US 7,256,925
Granted Patent B2
US 7,256,925 · App. 11/483,443 · Granted Aug 14, 2007

Flexible electrochromic device and method of manufacturing the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,256,925
App. No.
11/483,443
Granted
Aug 14, 2007
Kind
B2
Abstract

A flexible electrochromic device including a flexible transparent electrode including a predetermined pattern, an insulating layer formed on a portion of the transparent electrode other than the predetermined pattern, a semiconductor layer formed on the predetermined pattern, an electrochromic monolayer formed on the semiconductor layer, a flexible counter electrode disposed to face the transparent electrode and an electrolyte provided in a space between the transparent electrode and the counter electrode.

Claims (33)

1. A flexible electrochromic device comprising:

a flexible transparent electrode comprising a predetermined pattern;

an insulating layer formed on a portion of the transparent electrode other than the predetermined pattern on the transparent electrode;

a semiconductor layer formed on the predetermined pattern;

an electrochromic monolayer formed on the semiconductor layer;

a flexible counter electrode disposed to face the transparent electrode; and

an electrolyte provided in a space between the transparent electrode and the counter electrode.

2. The device as set forth in claim 1 , wherein the insulating layer comprises transparent photosensitive insulating material.

3. The device as set forth in claim 1 , wherein the semiconductor layer comprises one of titanium oxide, zirconium oxide, strontium oxide, niobium oxide, hafnium oxide, indium oxide, tin oxide, zinc oxide and a combination including at least one of the foregoing.

4. The device as set forth in claim 1 , wherein the semiconductor layer is formed via electrophoretic deposition and then compression.

5. The device as set forth in claim 4 , wherein the semiconductor layer is compressed at a pressure of about 500 kg f /cm 2 to about 5000 kg f /cm 2 .

6. The device as set forth in claim 1 , wherein the semiconductor layer has a particle size of about 5 nm to about 30 nm.

7. The device as set forth in claim 1 , wherein the electrochromic monolayer comprises a viologen compound derivative as an n-type electrochromic material.

8. The device as set forth in claim 1 , wherein the transparent electrode comprises a transparent plastic substrate and a transparent conductive material applied thereon.

9. The device as set forth in claim 1 , wherein the counter electrode comprises a metal foil and a reflective plate formed on the metal foil.

10. The device as set forth in claim 9 , wherein the counter electrode further comprises a conductive material between the metal foil and the reflective plate.

11. The device as set forth in claim 9 , wherein the reflective plate comprises one of titanium oxide, zirconium oxide, strontium oxide, niobium oxide, hafnium oxide, indium oxide, tin oxide, zinc oxide and a combination including at least one of the foregoing.

12. The device as set forth in claim 9 , wherein the reflective plate has a particle size of about 100 nm to about 500 nm.

13. The device as set forth in claim 1 , further comprising a p-type electrochromic monolayer or a redox compound on the counter electrode and/or electrolyte.

14. The device as set forth in claim 13 , wherein the electrochromic monolayer comprises one of Prussian blue, phenothiazine compound derivatives, or ferrocene compound derivatives, as a p-type electrochromic compound.

15. A method of manufacturing a flexible electrochromic device, the method comprising:

forming a transparent electrode comprising a predetermined pattern;

forming an insulating layer on a portion of the transparent electrode other than the predetermined pattern to expose the predetermined pattern;

forming a semiconductor layer on the exposed predetermined pattern;

compressing the semiconductor layer;

forming an electrochromic monolayer on the semiconductor layer;

forming a counter electrode to face the transparent electrode; and

providing an electrolyte between the transparent electrode and the counter electrode.

16. The method as set forth in claim 15 , wherein the forming the transparent electrode comprises disposing a transparent conductive material on a transparent substrate.

17. The method as set forth in claim 15 , wherein the forming an insulating layer comprises applying and processing a transparent photosensitive insulating film.

18. The method as set forth in claim 15 , wherein the forming a semiconductor layer comprises electrophoretic deposition.

19. The method as set forth in claim 15 , wherein the compressing of the semiconductor layer is conducted at a pressure of 500˜5000 kg f /cm 2 .

20. The method as set forth in claim 15 , wherein the forming the counter electrode comprises forming a reflective plate on a metal foil and disposing a conductive material between the reflective plate and the metal foil.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2006
From: NOH, CHANG HO; CHO, SUNG HEN; SONG, KI YONG; KIM, JIN YOUNG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018055/0071 →
Priority Claims (1)
KR 10-2005-0133664 · Dec 29, 2005 · national
Continuity (1)
Related Publication 20070153357A1 · Jul 5, 2007