MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device

1. A Metal Ferroelectric Semiconductor (MFS type) field effect transistor comprising:

a semiconductor layer formed of Si;

a PZT system ferroelectric layer formed directly on the semiconductor layer;

a gate electrode formed of one selected from the group consisting of Pt, Ir, and Ru is formed directly on the PZT system ferroelectric layer;

an pair of impurity layers composing a source or a drain, formed in the semiconductor layer directly adjacent the PZT system ferroelectric layer; and

a pair of element isolation regions formed directly on the semiconductor layer directly adjacent the impurity layers,

wherein the PZT system ferroelectric layer includes an Nb composition that replaces a Ti composition by 20 mol %.

2. The MFS type field effect transistor according to claim 1 , wherein a diffusion length of oxygen in the gate electrode from the PZT system ferroelectric layer is 15 nm or less, as obtained from a profile according to a Rutherford backscattering analysis method (RBS) and a nuclear reaction analysis method (NRA).

3. The MFS type field effect transistor according to claim 1 , wherein a diffusion length of oxygen in the gate electrode from the PZT system ferroelectric layer is 30 nm or less, as obtained from a profile according to an Auger electron spectroscopy (AES).

4. The MFS type field effect transistor according to claim 1 , wherein the PZT system ferroelectric layer has a generally constant distribution of proportion of oxygen atoms in the PZT system ferroelectric layer.

5. The MFS type field effect transistor according to claim 4 , wherein the distribution of proportion of oxygen atoms in the PZT system ferroelectric layer is 1% or less, when a difference in proportions of oxygen atoms in the PZT system ferroelectric layer in a film thickness direction thereof is expressed by (a maximum value−a minimum value)/(an average value of the maximum value and the minimum value) and obtained from a profile according to a Rutherford backscattering analysis method (RBS) and a nuclear reaction analysis method (NRA).

6. The MFS type field effect transistor according to claim 4 , wherein the distribution of proportion of oxygen atoms in the PZT system ferroelectric layer is 3% or less, when a difference in proportions of oxygen atoms in the PZT system ferroelectric layer in a film thickness direction thereof is expressed by (a maximum value−a minimum value)/(an average value of the maximum value and the minimum value) and obtained from a profile according to an Auger electron spectroscopy (AES).

7. The MFS type field effect transistor according to claim 1 , wherein, in the PZT system ferroelectric layer, 95 % or more of oxygen contained in the PZT system ferroelectric layer exists at positions of oxygen of a perovskite structure.

8. The MFS type field effect transistor according to claim 1 , wherein the PZT system ferroelectric layer contains a Ti composition more than a Zr composition.

9. The MFS type field effect transistor according to claim 1 , wherein the PZT system ferroelectric layer has a crystal structure of at least one of tetragonal and rhombohedral systems.

10. The MFS type field effect transistor according to claim 9 , wherein the PZT system ferroelectric layer consists of a tetragonal system, and has a (111) orientation.

11. The MFS type field effect transistor according to claim 1 , wherein the PZT system ferroelectric layer includes 0.5 mol % or more of Si, or Si and Ge.

12. The MFS type field effect transistor according to claim 1 , wherein the PZT system ferroelectric layer includes 0.5 mol % or more but less than 5 mol % of Si, or Si and Ge.

13. A ferroelectric memory using the MFS type field effect transistor recited in claim 1 .

14. A semiconductor device using the ferroelectric memory recited in claim 13 .