Bimodal operation of ferroelectric and electret memory cells and devices
In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
1. A method for enhancing the data-storage capability of a ferroelectric or electret memory cell, which has been set in a predetermined remanent or non-volatile polarization state and thereafter allowed to attain an imprint condition, comprising:
applying one or more voltage pulses with a shape and polarity and/or time integral sufficient to evoke a temporary relaxation of the imprint condition and thereby changing an existing imprinted polarization state to a relaxed and volatile polarization state that can be discriminated from the imprinted polarization state in a detection or readout operation performed in a time window given by a time constant of the relaxed and volatile state by a change in the dynamic polarization response of the memory cell or by a transient change in its charge value or both.
2. The method according to claim 1 , wherein
more than one voltage pulse is applied, and
the applied voltage pulses are bipolar.
3. The method according to claim 1 , wherein
application of said voltage pulse or pulses corresponds to write operation on the memory cell whereby a stored non-volatile logic state or datum is overwritten with the same or another logic state or datum for temporary or volatile storage.
4. The method according to claim 1 , wherein
said write operation is performed dependent of an existing non-volatile logic state of the imprinted memory cell, and subject to a predetermined protocol.
5. The method according to claim 1 , wherein
said write operation is performed independent of an existing non-volatile logic state of the imprinted memory cell, and subject to a predetermined protocol.
6. The method according to claim 1 , wherein
said write operation is performed by subjecting the memory cell to said voltage pulses with the same polarity.
7. The method according to claim 1 , wherein said write operation is performed by subjecting the memory cell to said voltage pulses with both polarities.
8. The method according to claim 1 , wherein
the memory cell is subjected to said one or more voltage pulse/pulses having a shape and polarity and/or time integral that causes the imprinted memory cell to change dynamic response of the memory cell, said changed dynamic response being assigned a logical value or stored datum according to the predetermined protocol.
9. A method for non-destructive readout of a ferroelectric or electret memory cell which has been set in a predetermined or non-volatile polarization state and allowed to attain an imprint condition, whereafter the imprinted condition has temporarily been changed to a transient volatile polarization state, comprising:
applying one or more voltage pulses with a shape and polarity and/or time integral sufficient to evoke a readout signal indicative of a volatile polarization state of the memory cell, but without appreciably altering the volatile polarization state thereof, such that repeated readout operations can be performed in time window wherein the memory cell resides in its transient or volatile polarization state, the thus detected readout signal corresponding to a stored logical value or datum which has been set in the memory in a write operation according to a predetermined protocol, said write operation being performed on an imprinted memory cell by temporarily changing its non-volatile polarization state to a volatile polarization state thereof.
10. A method for storing and accessing data in a ferroelectric memory device comprising an array of memory cells wherein data has been written to the memory cells and the memory cells allowed to attain an imprint condition, comprising:
overwriting the imprinted cells to effect a temporary and volatile storage of data in the memory device by assigning a first logical value to an imprinted memory cell with no application of a potential difference thereto and assigning a second logical value by applying one or more potential differences across an imprinted memory cell, thus transferring the memory cell to a relaxed polarization state, and discriminating between an imprinted and a relaxed memory cell by recording or detecting a dynamic response thereof, whereby the temporarily stored data can be read out in a non-destructive operation in a time window given by the lifetime of the relaxed polarization state.