Etch stop and hard mask film property matching to enable improved replacement metal gate process
A method including forming a hard mask and an etch stop layer over a sacrificial material patterned as a gate electrode, wherein a material for the hard mask and a material for the etch stop layer are selected to have a similar stress property; removing the material for the hard mask and the material for the etch stop layer sufficient to expose the sacrificial material; replacing the sacrificial material with another material. A system including a computing device including a microprocessor, the microprocessor including a plurality of transistor devices, at least one of the plurality of transistor devices including a gate electrode formed on a substrate surface; a discontinuous etch stop layer conformally formed on the substrate surface and adjacent side wall surfaces of the gate electrode; and a dielectric material conformally formed over the etch stop layer.
1. A method comprising:
forming a hard mask and an etch stop layer over a sacrificial material patterned as a gate electrode, wherein a material for the hard mask and a material for the etch stop layer are selected such that a stress property of each material is similar;
removing the material for the hard mask and the material for the etch stop layer sufficient to expose the sacrificial material;
replacing the sacrificial material with another material.
2. The method of claim 1 , wherein the stress property is compressive.
3. The method of claim 1 , wherein the etch stop layer is compressive silicon nitride.
4. The method of claim 1 , wherein the etch stop layer is silicon carbide.
5. The method of claim 1 , wherein removing the material for the hard mask and the material for the etch stop layer comprises a wet etch chemistry.
6. A method comprising:
forming a hard mask over a surface of a gate electrode on a substrate, the surface opposite a surface of the substrate;
forming an etch stop layer over the hard mask, wherein a material for the etch stop layer and a material for the hard mask are selected such that a stress property of each material is similar;
forming a dielectric material over the hard mask;
exposing the etch stop layer on the hard mask by removing the dielectric material; and
exposing the surface of the gate electrode by removing the etch stop layer and the hard mask.
7. The method of claim 6 , wherein exposing the etch stop layer is accomplished by a first process of removal of material and exposing the surface of the gate electrode is accomplished by a second process of removal of material different than the first process.
8. The method of claim 7 , wherein the first process is a chemical mechanical polishing process.
9. The method of claim 7 , wherein the second process is an etch process.
10. The method of claim 9 , wherein the etch process is a chemical etch that removes a material for the hard mask and a material for the etch stop layer at a similar rate.
11. The method of claim 6 , wherein the stress property is compressive.
12. The method of claim 6 , wherein forming the etch stop layer comprises conformally depositing the etch stop layer over the surface of the substrate and the hard mask.
13. A system comprising:
a computing device comprising a microprocessor, the microprocessor comprising a plurality of transistor devices, at least one of the plurality of transistor devices comprising:
a gate electrode formed on a substrate surface;
an etch stop layer comprising silicon carbide conformally formed on the substrate surface and adjacent side wall surfaces of the gate electrode and being discontinuous over a surface of the gate electrode opposite the substrate surface; and
a dielectric material conformally formed over the etch stop layer.