Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same
An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.
1. A method for producing an active region for a long wavelength light emitting device, the method comprising:
placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film;
forming a quantum well layer of InAsP; and
forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C.
2. The method of claim 1 , further comprising forming the quantum well layer of InAsP using a mole fraction of InAs 0.6 P 0.4 .
3. The method of claim 1 , further comprising using indium gallium phosphide (InGaP) to form the barrier layer.
4. The method of claim 3 , further comprising forming the barrier layer using a mole fraction of In 0.85 Ga 0.15 P.
5. The method of claim 1 , further comprising using indium gallium arsenide phosphide (InGaAsP) to form the barrier layer.
6. The method of claim 5 , further comprising forming the barrier layer using a mole fraction of In 0.8 Ga 0.2 As 0.1 P 0.9 .
7. A method for producing a long wavelength light emitting device using organometallic vapor phase epitaxy (OMVPE), comprising:
providing a substrate in an OMVPE reactor;
growing a first cladding layer of indium phosphide (InP);
growing a lower separate confinement heterostructure (SCH) layer of InGaAsP;
growing an active region comprising alternating layers of InGaP barrier layers and InAsP quantum well layers, the InGaP barrier layers and the InAsP quantum well layers grown at a temperature of less than 520 degrees C.;
growing an upper SCH layer of InGaAsP;
growing an etch stop layer of InP;
growing a second cladding layer of indium phosphide (InP); and
growing a cap layer of InGaAs.
8. The method of claim 7 , further comprising growing the quantum well layer of InAsP using a mole fraction of InAs 0.6 P 0.4 .
9. The method of claim 7 , further comprising using indium gallium phosphide (InGaP) to form the barrier layer.
10. The method of claim 9 , further comprising growing the barrier layer using a mole fraction of In 0.85 Ga 0.15 P.
11. The method of claim 7 , further comprising using indium gallium arsenide phosphide (InGaAsP) to form the barrier layer.
12. The method of claim 11 , further comprising forming the barrier layer using a mole fraction of In 0.8 Ga 0.2 As 0.1 P 0.9 .