Laminating product including adhesion layer and laminate product including protective film
In a laminate product formed by an organic member and/or an inorganic member, high strength adhesion between the organic member and the inorganic member is achieved by providing an adhesion layer which includes amorphous carbon nitride (a-CNx:H) particularly between the organic member and the inorganic member. Further, in order to protect a laminate product formed by an organic member and/or an inorganic member, for example, an organic electronic element including an organic compound layer, such as an organic electroluminescence element, a protective film including at least amorphous carbon nitride and a protective layer having a laminate structure formed by sandwiching a vapor deposition inorganic film between plasma polymerized films are used. Thus, a protective film which is optimum to an organic electronic element, having high bending stress resistance, high shielding effect against moisture and oxygen existing in the air, and excellent resistance to high temperature and high humidity can be provided.
1. An organic electronic device comprising, on a base member;
an organic electronic element comprising at least an electrode and an organic compound layer, and
one of or both a protective film which is formed covering the organic electronic element and a protective film which is formed between the organic electronic element and the base member,
wherein the protective film comprises amorphous carbon nitride.
2. An organic electronic device according to claim 1 , wherein,
the film comprising amorphous carbon nitride is formed by a plasma enhanced chemical vapor deposition method using, as a raw material, gas comprising one or more of alkane, alkene, and alkyne, and gas comprising nitrogen and ammonia.
3. An organic electronic device according to claim 1 , wherein
the protective film is a single film made of the amorphous carbon nitride or a laminate film formed by the amorphous carbon nitride and an inorganic film.
4. An organic electronic device according to claim 3 , wherein,
the film comprising amorphous carbon nitride is formed by a plasma enhanced chemical vapor deposition method using, as a raw material, gas comprising one or more of alkane, alkene, and alkyne, and gas comprising nitrogen and ammonia.
5. An organic electronic device according to claim 3 , wherein
the inorganic film comprises one or more of a nitride film, an oxide film, and a silicon film.
6. An organic electronic device according to claim 1 , wherein
the inorganic film is one or more of a silicon nitride film, a boron nitride film, an aluminum nitride film, a silicon oxide film, an aluminum oxide film, a titanium oxide film, and an amorphous silicon film.
7. An organic electronic device according to claim 1 , wherein
the organic electronic element comprises an organic transistor or a liquid crystal element.