Silicon carbide semiconductor device
A silicon carbide semiconductor device is provided with a semiconductor substrate ( 20 ) of silicon carbide of a first conductivity type, a hetero semiconductor region ( 60 ) forming a hetero-junction with the semiconductor substrate ( 20 ), an insulated gate including a gate electrode ( 40 ) and a gate insulator layer ( 30 ) formed on the semiconductor substrate ( 20 ) and adjoining to the hetero semiconductor region ( 60 ), a source electrode ( 80 ) electrically connected to the hetero semiconductor region ( 60 ) and a drain electrode ( 90 ) electrically connected to the semiconductor substrate ( 20 ).
1. A silicon carbide semiconductor device comprising:
a semiconductor substrate of silicon carbide of a first conductivity type;
a hetero semiconductor region forming a hetero-junction with the semiconductor substrate;
an insulated gate including a gate electrode and a gate insulator layer formed on the semiconductor substrate and adjoining to the hetero-junction;
a source electrode electrically connected to the hetero semiconductor region; and
a drain electrode electrically connected to the semiconductor substrate, wherein
the semiconductor substrate includes a second conductivity type region in contact with the gate insulator layer.
2. The silicon carbide semiconductor device of claim 1 , wherein:
the hetero semiconductor region further includes a second hetero semiconductor region having a different impurity concentration from the hetero semiconductor region.
3. The silicon carbide semiconductor device of claim 1 , wherein:
the hetero semiconductor region comprises a material selected from the group of silicon, amorphous silicon and polycrystalline silicon.
4. A silicon carbide semiconductor device comprising:
a semiconductor substrate of silicon carbide of a first conductivity type;
a hetero semiconductor region forming a hetero-junction with the semiconductor substrate;
an insulated gate including a gate electrode and a gate insulator layer formed on the semiconductor substrate and adjoining to the hetero-junction;
a source electrode electrically connected to the hetero semiconductor region; and a drain electrode electrically connected to the semiconductor substrate, wherein
the semiconductor substrate further includes a second semiconductor region of a first conductivity type, the second semiconductor region having a different impurity concentration from the semiconductor substrate, so as to form a second hetero-junction with the hetero semiconductor region.
5. The silicon carbide semiconductor device of claim 4 , wherein
the hetero semiconductor region further includes a second hetero semiconductor region having a different impurity concentration from the hetero semiconductor region.
6. The silicon carbide semiconductor device of claim 4 , wherein
the hetero semiconductor region comprises a material selected from the group of silicon, amorphous silicon and polycrystalline silicon.