Temperature independent low reference voltage source
View Patent ↗A circuit of the invention comprises a low voltage PTAT source. Current generators (t 1 , t 2 ) are controlled so that their output currents I 1 and I 2 , respectively, have temperature properties of the quotient V PTAT /R. The current I 1 is conducted to a first terminal (X) on a first connection of a composition of series connected resistors (Ra, Rb), a second connection thereof being grounded. A transistor (T) is diodelike forward connected between the first terminal (X) and the ground. The current I 2 is conducted to a second terminal (Y), preferably being at the same time a common connection (Z) of the resistors (Ra, Rb). Reference voltage Vr is tapped from the connection (Z). Said resistors (Ra, Rb) are manufactured in the n − -well technology in the same way as the resistor (R), with the resistance of which the mentioned quotient is generated. The proposed circuit is distinguished for its current controlled summing regulator, which is also suggested by the invention, and which makes it possible that in a temperature range from −50° C. to 150° C. a very low reference voltage of 0.35 V at low supply voltage lying below 0.9 V is reached, and does not simultaneously introduce nonideal behaviour like offset voltage.
1. Low reference voltage source, whereas the reference voltage Vr is temperature independent, comprising a low voltage-V PTAT source, the voltage V PTAT being proportional to the absolute temperature, characterized in
that it comprises a voltage-to-current converter (VCC), comprising the low voltage-V PTAT source and a resistor (R) and a current I at its input across a diode element (t) produces a control potential V, the temperature characteristics of which includes the temperature characteristics from the quotient V PTAT /R between the voltage V PTAT and the resistance of the resistor (R),
that a first current generator (t 1 ) and a second current generator (t 2 ), both being controlled by the control potential V, generate a first current I 1 and a second current I 2 , respectively, the temperature characteristics of which include the temperature characteristics of the said quotient V PTAT /R, that the first current I 1 is conducted to a first terminal (X) on a first connection of a composition of series connected first resistor (Ra) and a second resistor (Rb), a second connection of said composition being grounded,
that a transistor (T; T′) is diodelike forward connected between the first terminal (X) and the ground,
that the second current I 2 is conducted to a second terminal (Y) on a common connection (Z) of the first resistor (Ra) and the second resistor (Rb),
that the reference voltage Vr is tapped from the common connection (Z) of the first resistor (Ra) and the second resistor (Rb)
and that the first resistor (Ra) and the second resistor (Rb) are manufactured in the n-well technology in the same way as the resistor (R) within the voltage-to-current converter (VCC).
2. Low reference voltage source as recited in claim 1 , characterized in that said transistor is a vertical bipolar pnp transistor (T) havining an emitter connected to the first terminal (X), the collector and the base of said transistor are grounded.
3. Low reference voltage source as recited in claim 1 , characterized in that said transistor between the first terminal (X) and the ground is a MOS transistor (T′) connected like a diode.
4. Low reference voltage source as recited in claim 2 , characterized in that the second current I 2 is conducted to the second terminal (Y′) by a sliding terminal on the second resistor (Rb).
5. Low reference voltage source as recited in claim 4 , characterized in that the first current generator (t 1 ) and the second current generator (t 2 ) are selected so that the second current I 2 exceeds the first current I 1 .
6. Low reference voltage source as recited in claim 5 , characterized in that the first and the second current generators (t 1 , t 2 ) are forward connected MOS transistors.