System and method for IDDQ measurement in system on a chip (SOC) design
System and method for detecting transistor failure in large-scale integrated circuits by measuring IDDQ. A preferred embodiment comprises a switch structure for an integrated circuit made up of a plurality of main switches (such as main switch 410 ) selectively coupling a power sub-domain to a power source pin, a plurality of pi-switches (such as pi-switch 415 ) selectively coupling pairs of power sub-domains, and a plurality of IDDQ switches (such as IDDQ switch 425 ) selectively coupling the power sub-domains to a VIDDQ pin. The pi-switches can decouple the power sub-domains while the IDDQ switches can enable the measurement of the quiescent current in the power sub-domains. The use of pi-switches and IDDQ switches can permit the measurement of the quiescent current in the power sub-domains without requiring the use of isolation buffers and needed to powering on and off the integrated circuit between current measurements in the different power sub-domains.
1. A switch structure comprising:
a plurality of power sub-domains;
a pluraiity of main switches, wherein each main switch selectively couples a different power sub-domain to a power supply;
a plurality of IDDQ switches, wherein each IDDQ switch selectively couples a power sub-domain to a VIDDQ pin, wherein there is one main switch and one IDDQ switch for each power sub-domain; and
a plurality of pi-switches coupled between power sub-domains.
2. The switch structure of claim 1 , wherein all main switches are coupled to a a single power supply and wherein all IDDQ switches are coupled to a single VIDDQ pin.
3. The switch structure of claim 1 further comprising a current measuring device coupled to the VIDDQ pin and operable to measure a current drawn.
4. The switch structure of claim 3 further comprising a scan memory operable to store test vectors from a measurement of the current drawn.
5. The switch structure of daim 1 further comprising a current measurinq device coupled to the VIDDQ pin and operable to measure a current drawn and wherein the main switches and pi-switches comprise MOSFET transistors.
6. The switch structure of claim 5 further comprising a scan memory operable to store test vectors from a measurement of the current drawn.
7. The switch structure of claim 1 , wherein the main switches and pi-switches comprise MOSFET transistors and a width of the pi-switches MOSFET transistors is smaller than a width of the main switches MOSFET transistors.
8. A switch structure comprising:
a plurality of main switches, wherein each main switch selectively couples a power sub-domain to a power supply;
a plurality of IDDQ switches, wherein each IDDQ switch selectively couples a power sub-domain to a VIDDQ pin, wherein there is one main switch and ore IDDQ switch for each power sub-domain;
a plurality of pi-switches coupled between power sub-domains;
a current measuring device coupled to the VIDDQ pin and operable to measure a current drawn and wherein the main switches and pi-switches comprise MOSFET transistors;
wherein a width of the pi-switches MOSFET transistors is smaller than a width of the main switches MOSFET transistors; and
a scan memory operable to store test vectors from a measurement of the current drawn.