Microelectromechanical systems, and devices having thin film encapsulated mechanical structures
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
1. A microelectromechanical device comprising:
a chamber;
a first layer;
a first encapsulation layer comprising a permeable material, wherein first encapsulation layer forms at least a portion of a wall of the chamber;
a micromechanical structure, wherein: (1) at least a portion of the micromechanical structure is formed in and/or from the first layer, and (2) at least a portion of the micromechanical structure is disposed in the chamber;
a second encapsulation layer, disposed on the first encapsulation layer to seal the chamber, wherein the second encapsulation layer is a semiconductor material and wherein the first and second encapsulation layers are different from the first layer; and
a field region disposed outside and above the chamber, wherein:
the field region includes monocrystalline silicon;
the first encapsulation layer is a semiconductor material;
a first portion of the first encapsulation layer includes monocrystalline silicon and a second portion of the first encapsulation layer includes a porous or amorphous silicon;
the second portion of the first encapsulation layer is a portion of the wall of the chamber;
a portion of the second encapsulation layer that is on the second portion of the first encapsulation layer includes polycrystalline silicon.
2. A microelectromechanical device comprising:
a chamber;
a first layer;
a first encapsulation layer comprising a permeable material, wherein first encapsulation layer forms at least a portion of a wall of the chamber;
a micromechanical structure, wherein: (1) at least a portion of the micromechanical structure is formed in and/or from the first layer, and (2) at least a portion of the micromechanical structure is disposed in the chamber;
a second encapsulation layer, disposed on the first encapsulation layer to seal the chamber, wherein the second encapsulation layer is a semiconductor material and wherein the first and second encapsulation layers are different from the first layer;
a contact which is at least partially disposed outside the chamber; and
an insulation layer disposed on at least a portion of the second encapsulation layer, wherein the insulation layer includes an opening over the contact and wherein the microelectromechanical device further includes a highly electrically conductive layer that is disposed in the opening and on the contact and on at least a portion of the insulation layer.
3. A microelectromechanical device comprising:
a chamber;
a first layer;
a first encapsulation layer comprising a permeable material, wherein first encapsulation layer forms at least a portion of a wall of the chamber;
a micromechanical structure, wherein: (1) at least a portion of the micromechanical structure is formed in and/or from the first layer, and (2) at least a portion of the micromechanical structure is disposed in the chamber;
a second encapsulation layer, disposed on the first encapsulation layer to seal the chamber, wherein the second encapsulation layer is a semiconductor material and wherein the first and second encapsulation layers are different from the first layer;
a contact which is at least partially disposed outside the chamber, wherein the contact includes a semiconductor material that is doped with an impurity to increase the electrical conductivity of the contact;
an insulation layer disposed on the second encapsulation layer; and
a third encapsulation layer disposed on the second encapsulation layer, wherein:
the first encapsulation layer includes a plurality of vents formed therein and a porous polycrystalline silicon or amorphous silicon;
the second encapsulation layer is disposed in the plurality of vents to seal the chamber and includes polycrystalline silicon, silicon carbide, silicon/germanium, germanium, and/or gallium arsenide; and
the third encapsulation layer includes an insulating material.
4. A microelectromechanical device comprising:
a chamber;
a first layer;
a first encapsulation layer comprising a permeable material, wherein first encapsulation layer forms at least a portion of a wall of the chamber and includes at least one vent;
a micromechanical structure, wherein: (1) at least a portion of the micromechanical structure is formed in and/or from the first layer, and (2) at least a portion of the micromechanical structure is disposed in the chamber;
a second encapsulation layer, disposed on the first encapsulation layer to seal the chamber, wherein the second encapsulation layer is a semiconductor material and wherein the first and second encapsulation layers are different from the first layer;
a contact which is at least partially disposed outside the chamber;
an insulation layer disposed on at least the second encapsulation layer that is disposed in and/or on the at least one vent, wherein the insulation layer includes an opening over the contact; and
a highly electrically conductive layer that is disposed in the opening and on: (i) the contact and (ii) at least a portion of the insulation layer;
wherein the second encapsulation layer includes polycrystalline silicon.