Method and structure for facilitating etching
View Patent ↗A method and system for facilitating etching. Specifically, the method includes incorporating a fluorescent marker in a layer of a grouping of patterned layers. Etching of the group of patterned layers is controlled based upon the fluorescent marker.
1. A method for facilitating etching, comprising:
incorporating a fluorescent marker in a layer of a grouping of patterned layers; and
controlling etching of said grouping of patterned layers based upon said fluorescent marker.
2. The method of claim 1 , wherein said controlling etching comprises:
controlling etching based upon intensity of emitted energy of said fluorescent marker in said layer.
3. The method of claim 2 , further comprising:
adjusting etch rates of said layer based upon said emitted energy that is measured.
4. The method of claim 2 , further comprising:
comparing said emitted energy to a desired threshold; and
increasing etching of said layer if said emitted energy is above said desired threshold.
5. The method of claim 2 , further comprising:
comparing said emitted energy to a desired threshold; and
decreasing etching of said layer if said emitted energy is lower than said desired threshold.
6. The method of claim 1 , wherein said controlling etching comprises:
providing a substrate in said grouping of patterned layers;
depositing a 3D resist structure over said substrate, wherein said 3D resist structure comprises said layer; and
measuring an emitting energy of said fluorescent marker in said layer to determine a degree of etching of said layer.
7. The method of claim 1 , wherein said controlling etching comprises:
providing a substrate in said grouping of patterned layers;
depositing a device layer of material over said substrate, wherein said device layer comprises said layer incorporating said fluorescent marker;
depositing a 3D resist structure over said substrate; and
measuring an emitting energy of said fluorescent marker in said layer to determine a degree of etching of said layer.
8. The method of claim 7 , further comprising:
incorporating a second fluorescent marker in said 3D resist structure;
measuring an emitting energy of said second fluorescent marker in said 3D resist structure to determine a degree of etching of said 3D resist structure.
9. The method of claim 1 , further comprising:
utilizing a self-aligned imprint lithography (SAIL) process to form a plurality of semiconductor devices.
10. The method of claim 1 , further comprising:
illuminating said fluorescent marker in said layer at varying angles.
11. A structure facilitating etching, comprising:
a substrate; and
a 3D resist structure deposited over said substrate, wherein said 3D resist structure incorporates a first fluorescent marker for controlling etching of said 3D resist structure, wherein said first fluorescent marker is responsive to light energy at a first frequency.
12. The structure of claim 11 , further comprising:
a multi-level device layer sandwiched between said substrate and said 3D resist structure, wherein said multi-level device layer incorporates a second fluorescent marker for controlling etching of said multi-level device layer, wherein said second fluorescent marker is responsive to light energy at a second frequency.
13. The structure of claim 11 , wherein said substrate comprises:
a flexible substrate.
14. The structure of claim 11 , wherein said fluorescent marker comprises a complex organic dye molecule.
15. The structure of claim 11 , wherein said fluorescent marker is taken from a group consisting of:
Rhodamin 6G;
Alexa Fluor 488 dye;
Fluorescein; and
Oregon green.
16. A structure facilitating etching, comprising:
a substrate; and
a multi-level device layer of material deposited over said substrate, wherein said multi-level device layer incorporates a first fluorescent marker for controlling etching of said multi-level device layer, wherein said first fluorescent marker is responsive to light energy at a first frequency.
17. The structure of claim 16 , further comprising:
a 3D resist structure deposited over said device layer.
18. The structure of claim 17 , wherein said 3D resist structure incorporates a second fluorescent marker for controlling etching of said 3D resist layer, wherein said second fluorescent marker is responsive to light energy at a second frequency.
19. The structure of claim 16 , wherein said fluorescent marker is taken from a group consisting of:
rare earth ions; and
organometalic rare earth compounds.
20. The structure of claim 16 , wherein said multi-level device layer comprises a MEMs structure.