Semiconductor memory device and arrangement method thereof

1. A semiconductor memory device having a memory cell array, comprising:

column selecting signal lines and global data IO signal lines arranged on a layer in the same direction above the memory cell array;

word lines and first local data IO signal lines arranged on a different layer from the column selecting signal lines above the memory cell array in a perpendicular direction to the column selecting signal lines; and,

second local data IO signal lines arranged on a different layer from the column selecting signal lines and the word lines above the memory cell array in the same direction as the first local data IO signal lines.

2. The device of claim 1 , wherein the first and second local data IO signal lines are divided into a predetermined number of partial local data IO signal lines wherein some of a first plurality of the divided partial local data IO signal lines are arranged in the same layer as the first local data IO signal line and the rest of the first plurality of the divided partial local data IO signal lines are arranged in the same layer as the second local data IO signal line, while some of a second plurality of the divided partial local data IO signal lines are arranged in the same layer as the first local data IO signal line and the rest of the divided partial local data IO signal lines are arranged in the same layer as the second local data IO signal line.

3. The device of claim 1 , wherein the first and second local data IO signal lines are divided into local data IO signal line groups, each of the local data IO signal line groups comprising two pairs of the local data IO signal lines, which are alternately arranged adjacent to each other, and each of the local data IO signal lines comprises a plurality of partial local data IO signal lines.

4. The device of claim 2 , wherein the plurality of partial local data IO signal lines of the first and second local data IO signal lines are connected to each other in a manner that one end of a first partial local data IO signal line divided from the first local data IO signal line and one end of a second partial local data IO signal line divided from the second local data IO signal line cross over each other to be connected, wherein the first partial local data IO signal line is arranged in the same layer where the first local data IO signal line is arranged and the second partial local data IO signal line is arranged in the same layer where the second local data IO signal line is arranged.

5. The device of claim 4 , further comprising:

sub memory cell array regions comprising memory cells connected between bit lines and word lines, wherein the bit lines are arranged in a perpendicular direction to the word lines and sub word lines are arranged in the same direction as the word lines;

sub word line driver regions arranged on first and second areas between the sub memory cell array regions; and,

sense amplifier regions arranged on third and fourth areas between the sub memory cell array regions,

wherein the first and second local data IO signal lines are arranged above the sense amplifier regions.

6. The device of claim 5 , wherein the memory cells arranged above the memory cell array regions respectively are dynamic memory cells.

7. The device of claim 5 , wherein the global data IO signal lines are arranged above the sense amplifier regions and the sub memory cell array regions.