Current sensing method and current sensing device, power conversion device using this current sensing device, and vehicle using this power conversion device
A current sensing device for sensing current flowing through a MOSFET has a voltage divider circuit composed of a series circuit of a first resistor and a second resistor having different resistance temperature coefficients, with a voltage division ratio designed to change depending on temperature. The sensing device is connected between a source and a drain of said MOSFET. A sensing circuit takes out the source-to-drain voltage divided with the voltage divider to sense the current flowing through the MOSFET.
1. A current sensing method, for sensing current flowing through a MOSFET, comprising the steps of:
dividing a source-to-drain voltage of the MOSFET with a voltage divider circuit composed of a series circuit of a first resistor and a second resistor, wherein the voltage divider is connected with the MOSFET in parallel, and a voltage division ratio of the first resistor and the second resistor changes depending on temperature; and
sensing the current flowing through the MOSFET from the source-to-drain voltage divided with the voltage divider,
wherein when an on-resistance value of the MOSFET is denoted by Ron, a resistance value of the first resistor by R1, and a resistance value of said second resistor by R2, a value of expression Ron*R2/(R1+R2) either falls within 5% for a temperature range of not more than 50° C. or falls within 25% for a temperature range of above 50° C. to 200° C.
2. A current sensing device, for sensing current flowing through a MOSFET, comprising:
a voltage divider circuit composed of a series circuit of a first resistor and a second resistor having different resistance temperature coefficients, with a voltage division ratio designed to change depending on temperature, and is connected between a source and a drain of said MOSFET,
a sensing circuit for taking out the source-to-drain voltage divided with the voltage divider to sense the current flowing through the MOSFET,
wherein when an on-resistance value of the MOSFET is denoted by Ron, a resistance value of the first resistor by R1, and a resistance value of the second resistor by R2, a value of expression Ron*R2/(R1+R2) either falls within 5% for a temperature range of not more than 50° C. or falls within 25% for a temperature range of above 50° C. to 200° C.