EL display device, driving method thereof, and electronic equipment provided with the EL display device
View Patent ↗An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element ( 109 ) disposed in a pixel ( 104 ) are controlled by time, and the influence by the characteristic variability of a current controlling TFT ( 108 ) is prevented. When this method is used, a data signal side driving circuit ( 102 ) and a gate signal side driving circuit ( 103 ) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
1. An EL display device comprising:
a pixel portion and a driving circuit formed over a substrate;
plural pixels formed in the pixel portion, wherein the plural pixels are controlled by the driving circuit;
a switching TFT and a current-control TFT formed in one of the plural pixels;
a first interlayer insulating film formed over the switching TFT and the current-control TFT;
an EL element electrically connected to the current-control TFT, the EL element comprising a first electrode formed over the first interlayer insulating film, a second electrode formed over the first electrode and an EL layer between the first and second electrodes, and
a second interlayer insulating film formed over the first interlayer insulating film,
wherein the second interlayer insulating film overlaps an edge of the first electrode and the EL layer extends over at least an edge of the second interlayer insulating film, and
wherein the edge of the second interlayer insulating film has a tapered shape.
2. An EL display device according to claim 1 , further comprising:
a first passivation film formed between the switching TFT and the first interlayer insulating film.
3. An EL display device according to claim 1 ,
wherein the EL display device further comprises a passivation film formed over the EL element.
4. An EL display device according to claim 1 , further comprising a passivation film between the current-control TFT and the first interlayer insulating film.
5. An EL display device according to claim 1 ,
wherein the switching TFT and the current control TFT comprise an amorphous silicon layer as an active layer.
6. An EL display device according to claim 1 ,
wherein the switching TFT and the current control TFT comprise a polysilicon layer as an active layer.
7. An EL display device comprising:
a switching TFT and a current-control TFT formed in one pixel over a substrate;
a first interlayer insulating film formed over the switching TFT and the current-control TFT;
an EL element electrically connected to the current-control TFT, the EL element comprising a first electrode formed over the first interlayer insulating film, a second electrode formed over the first electrode and an EL layer between the first and second electrodes, and
a second interlayer insulating film formed over the first interlayer insulating film,
wherein the second interlayer insulating film overlaps an edge of the first electrode and the EL layer extends over at least an edae of the second interlayer insulating film,
wherein the second interlayer insulating film comprises a resin, and
wherein the edge of the second interlayer insulating film has a tapered shape.
8. An EL display device according to claim 7 , further comprising:
a first passivation film formed between the switching TFT and the first interlayer insulating film.
9. An EL display device according to claim 7 ,
wherein the EL display device further comprises a passivation film formed over the EL element.
10. An EL display device according to claim 7 , further comprising a passivation film between the current-control TFT and the first interlayer insulating film.
11. An EL display device according to claim 7 ,
wherein the switching TFT and the current control TFT comprise an amorphous silicon layer as an active layer.
12. An EL display device accdrding to claim 7 ,
wherein the switching TFT and the current control TFT comprise a polysilicon layer as an active layer.
13. An electronic equipment having an EL display device, the EL display device comprising:
a pixel portion and a driving circuit formed over a substrate;
plural pixels formed in the pixel portion, wherein the plural pixels are controlled by the driving circuit;
a switching TFT and a current-control TFT formed in one of the plural pixels;
a first interlayer insulating film formed over the switching TFT and the current-control TFT;
an EL element electrically connected to the current-control TFT, the EL element comprising a first electrode formed over the first interlayer insulating film, a second electrode formed over the first electrode and an EL layer between the first and second electrodes, and
a second interlayer insulating film formed over the first interlayer insulating film,
wherein the second interlayer insulating film overlaps an edae of the first electrode and the EL layer extends over at least an edae of the second interlayer insulating film, and
wherein edge of the second interlayer insulating film has a tapered shape.
14. An electronic equipment according to claim 13 , further comprising:
a first passivation film formed between the switching TFT and the first interlayer insulating film.
15. An electronic equipment according to claim 13 ,
wherein the EL display device further comprises a passivation film formed over the EL element.
16. An electronic equipment according to claim 13 ,
wherein the electronic equipment is selected from the group consisting of a personal computer, a video camera, a head mounted display, a picture reproducer and a portable computer.
17. An electronic equipment according to claim 13 , further comprising a passivation film between the current-control TFT and the first interlayer insulating film.
18. An electronic equipment according to claim 13 ,
wherein the switching TFT and the current control TFT comprise an amorphous silicon layer as an active layer.
19. An electronic equipment according to claim 13 ,
wherein the switching TFT and the current control TFT comprise a polysilicon layer as an active layer.
20. An electronic equipment having an EL display device, the EL display device comprising:
a switching TFT and a current-control TFT formed in one pixel over a substrate;
a first interlayer insulating film formed over the switching TFT and the current-control TFT;
an EL element electrically connected to the current-control TET, the EL element comprising a first electrode formed over the first interlayer insulating film, a second electrode formed over the first electrode and an EL layer between the first and second electrodes, and
a second interlayer insulating film formed over the first interlayer insulating film,
wherein the second interlayer insulating film overlaps an edge of the first electrode and the EL layer extends over at least an edae of the second interlayer insulating film,
wherein the second interlayer insulating film comprises a resin, and
wherein the edge of the second interlayer insulating film has a tapered shape.
21. An electronic equipment according to claim 20 , further comprising:
a first passivation film formed between the switching TFT and the first interlayer insulating film.
22. An electronic equipment according to claim 20 ,
wherein the EL display device further comprises a passivation film formed over the EL element.
23. An electronic equipment according to claim 20 ,
wherein the electronic equipment is selected from the group consisting of a personal computer, a video camera, a head mounted display, a picture reproducer and a portable computer.
24. An electronic equipment according to claim 20 , further comprising a passivation film between the current-control TFT and the first interlayer insulating film.
25. An electronic equipment according to claim 20 ,
wherein the switching TFT and the current control TFT comprise an amorphous silicon layer as an active layer.
26. An electronic equipment according to claim 20 ,
wherein the switching TFT and the current control TFT comprise a polysilicon layer as an active layer.
27. An EL display device comprising:
a switching TFT and a current-control TFT formed in one pixel over a substrate;
a first flattening insulating film formed over the switching TFT and the current-control TFT;
an EL element electrically connected to the current-control TFT, the EL element comprising a first electrode formed over the first flattening insulating film, a second electrode formed over the first electrode and an EL layer between the first and second electrodes;
a second interlayer insulating film formed over the first flattening film wherein the second interlayer insulating film overlaps an edge of the first electrode and the EL layer extends over at least an edge of the second interlayer insulating film,
wherein the edge of the second interlayer insulating film has a tapered shape.
28. An EL display device according to claim 27 , further comprising a passivation film between the switching TFT and the first flattening insulating film.
29. An EL display device according to claim 27 , further comprising a passivation film between the current-control TFT and the first flattening insulating film.
30. An EL display device according to claim 27 ,
wherein the EL display device further comprises a passivation film formed over the EL element.
31. An EL display device according to claim 27 ,
wherein the switching TFT and the current control TFT comprise an amorphous silicon layer as an active layer.
32. An EL display device according to claim 27 ,
wherein the switching TFT and the current control TFT comprise a polysilicon layer as an active layer.
33. An electronic equipment having an EL display device, the EL display device comprising:
a switching TFT and a current-control TFT formed in one pixel over a substrate;
a first flattening insulating film formed over the switching TFT and the current-control TFT;
an EL element electrically connected to the current-control TFT, the EL element comprising a first electrode formed over the first flattening insulating film, a second electrode formed over the first electrode and an EL layer between the first and second electrodes;
a second interlayer insulating film formed over the first flattening film wherein the second interlayer insulating film overlaps an edge of the first electrode and the EL layer extends over at least an edge of the second interlayer insulating film,
wherein the edge of the second interlayer insulating film has a tapered shape.
34. An electronic equipment having an EL display device according to claim 33 , further comprising a passivation film between the switching TFT and the first flattening insulating film.
35. An electronic equipment having an EL display device according to claim 33 , further comprising a passivation film between the current-control TFT and the first flattening insulating film.
36. An electronic equipment having an EL display device according to claim 33 ,
wherein the EL display device further comprises a passivation film formed over the EL element.
37. An electronic equipment according to claim 33 ,
wherein the switching TFT and the current control TFT comprise an amorphous silicon layer as an active layer.
38. An electronic equipment according to claim 33 ,
wherein the switching TFT and the current control TFT comprise a polysilicon layer as an active layer.
39. An electronic equipment according to claim 33 ,
wherein the electronic equipment is selected from the group consisting of a personal computer, a video camera, a head mounted display, a picture reproducer and a portable computer.