Semiconductor component with switching element configured to reduce parasitic current flow

1. A semiconductor component comprising:

a first semiconductor layer;

a second semiconductor layer positioned adjacent the first semiconductor layer, having a doping opposite the first semiconductor layer;

insulator structures provided in the second semiconductor layer and dividing the second semiconductor layer into a plurality of functional element semiconductor regions insulated from one another, where a semiconductor functional element is formed, at least in part, from one of the functional element semiconductor regions; and

a switching element integrated as a field effect transistor in the semiconductor component between two functional element semiconductor regions and electrically connected between base and emitter terminals of a NPN/PNP structure which is formed by a respective part of the two functional element semiconductor regions and an intermediate part of the first semiconductor layer;

said field effect transistor comprising:

a source region provided within one of said insulator structures between said two functional element semiconductor regions;

a gate region;

a body region; and

a drain region;

the field effect transistor being driven actively when a negative voltage is applied to the drain region thereof, wherein the gate region induces a channel in the body region, which controls a current flowing from the source region through said one insulator structure to the adjoining functional element semiconductor to reduce a base/emitter voltage and whereby the parasitic flow of a current through that NPN/PNP structure.

2. The semiconductor component of claim 1 , wherein the insulator structures adjoin the first semiconductor layer and comprise semiconductor material which has the opposite doping to the second semiconductor layer.

3. The semiconductor component of claim 2 , wherein the switching element can be used to control a flow of current between an insulator structure and the adjoining functional element semiconductor region.

4. The semiconductor component of claim 3 , wherein the switching element is a transistor.

5. The semiconductor component of claim 4 , further comprising:

a source zone which is connected to a source connection of the transistor is integrated in the insulator structure, and a gate which can be used to control a flow of current from the source region, through the insulator structure, into an adjoining functional element semiconductor region.

6. The semiconductor component of claim 5 , wherein the functional element which is formed in the adjoining functional element semiconductor region is a transistor, a drain zone of the transistor which is formed in the functional element semiconductor region simultaneously being the drain zone of the transistor which is used to reduce the parasitic current.

7. A semiconductor component having a plurality of semiconductor functional elements, comprising:

a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being applied to the first semiconductor layer and having the opposite doping to the latter;

insulator structures that are provided at least in the second semiconductor layer and are used to divide the second semiconductor layer into a plurality of functional element semiconductor regions that are insulated from one another, each semiconductor functional element being formed, at least in part, from one of the functional element semiconductor regions;

a switching element integrated as a field effect transistor in the semiconductor component between two functional element semiconductor regions;

wherein it is possible to reduce a parasitic flow of current through an npn/pnp structure which is formed by a respective part of two functional element semiconductor regions and an intermediate part of the first semiconductor layer by using the switching element, which is integrated in the semiconductor component and can be driven actively, to generate a flow of current which reduces a base/emitter voltage of the npn/pnp structure, the parasitic current flow being generated by a parasitic transistor, wherein the switching element is connected electrically between base and emitter terminals of the parasitic transistor; and

the field effect transistor having a gate region, a body region, a source region and a drain region, and being driven actively when a negative voltage is applied to the drain region,

wherein the gate region induces a channel in the body region, which controls a current flowing from the source region through said one insulator structure to the adjoining functional element semiconductor to reduce a base/emitter voltage.

8. The semiconductor component of claim 7 , wherein the insulator structures adjoin the first semiconductor layer.

9. The semiconductor component of claim 8 , wherein the insulator structures comprise semiconductor material that has the opposite doping to the second semiconductor layer.

10. The semiconductor component of claim 8 , wherein the switching element can be used to control a flow of current between an insulator structure and the adjoining functional element semiconductor region.

11. The semiconductor component of claim 9 , wherein a source zone that is connected to a source connection of the transistor is integrated in the insulator structure, and a gate that can be used to control a flow of current from the source region, through the insulator structure, into the adjoining functional element semiconductor region is provided.

12. The semiconductor component as claimed in claim 11 , wherein the functional element that is formed in the adjoining functional element semiconductor region is a transistor, a drain zone of the transistor that is formed in the functional element semiconductor region simultaneously being the drain zone of the transistor which is used to reduce the parasitic current.

13. A semiconductor component having a plurality of semiconductor functional elements, comprising:

a first and a second semiconductor layer, the second semiconductor layer being applied to the first semiconductor layer and being doped inversely to the latter; insulator structures that are provided at least in the second

semiconductor layer and are used to divide the second semiconductor layer into a plurality of functional element semiconductor regions that are insulated from one another, each semiconductor functional element being formed, at least in part, from one of the functional element semiconductor regions, it being possible to reduce a parasitic flow of current through an npn/pnp structure that is formed by a respective part of two functional element semiconductor regions and the intermediate part of the first semiconductor layer by using a switching element, that can be driven actively, to generate a flow of current that reduces a base/emitter voltage of the npn/pnp structure, wherein the switching element that can be driven actively is integrated, in the form of a transistor having a source region, a gate region, a body region and a drain region, in the semiconductor component in such a manner that the source region which is connected to a source connection of the transistor is provided in an insulator structure, and the gate which can be used to control a flow of current from the source region, through the insulator structure, into the adjoining functional element semiconductor region is provided, wherein the switching element is connected electrically between base and emitter terminals of the transistor; and

wherein the transistor is driven actively when a negative voltage is applied to the drain region, and wherein the gate region induces a channel in the body region.

14. A semiconductor component comprising:

a first semiconductor layer;

a second semiconductor layer positioned adjacent the first semiconductor layer, having a doping opposite the first semiconductor layer;

insulator structures provided in the second semiconductor layer, used to divide the second semiconductor layer into a plurality of functional element semiconductor regions insulated from one another, where a semiconductor functional element is formed, at least in part, from one of the functional element semiconductor regions; and

switching means integrated in the semiconductor component between two functional element semiconductor regions, configured to reduce a parasitic current flow through the semiconductor component;

wherein said switching means includes a transistor having a gate region, a source region within one of said insulator structure between said two functional element semiconductor regions, a body region and a drain region, the transistor being driven actively when a negative voltages is applied to the drain region thereof, wherein the gate region induces a channel in the body region, which controls a current flowing from the source region through said one insulator structure to the adjoining functional element semiconductor to reduce a base/emitter voltage.

15. The semiconductor component of claim 14 , wherein the switch means is configured to reduce a parasitic flow of current through an npn/pnp structure which is formed by a respective part of the two functional element semiconductor regions and an intermediate part of the first semiconductor layer.

16. A semiconductor component comprising:

a first semiconductor functional element and a second semiconductor functional element;

a transistor switch integrated in the semiconductor component between the first semiconductor element and the second semiconductor functional element, configured to be actively driven to reduce parasitic currents in the first semiconductor functional element and the second semiconductor functional element, the parasitic current flow being generated by a parasitic transistor, wherein the switching element is connected electrically between base and emitter terminals of the parasitic transistor; and

the transistor switch having a gate region, a source region and a drain region, the switching element is driven actively when a negative voltage is applied to the drain region, the transistor includes a body region, and a gate induces a channel in the body region.