Apparatus for electroless deposition of metals onto semiconductor substrates

1. An electroless deposition system, comprising:

a processing mainframe;

at least one substrate cleaning station positioned on the mainframe;

an electroless deposition station positioned on the mainframe, wherein the electroless deposition station comprises:

an environmentally controlled processing enclosure;

a first fluid processing station positioned in the processing enclosure;

a second fluid processing station positioned in the enclosure; and

a substrate transfer shuttle positioned in the enclosure to transfer substrates between the first and second fluid processing stations; and

a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure,

wherein at least one of the first and second fluid processing stations comprises:

a rotatable substrate support assembly configured to support a substrate for processing; and

a plurality of fluid catch rings inwardly and upwardly extending from an interior of the processing stations toward a perimeter of the substrate positioned on the substrate support assembly, wherein each of the plurality of fluid catch rings is configured to collect fluid from the substrate as the substrate is positioned in a corresponding elevation.

2. The deposition system of claim 1 , wherein the rotatable substrate support assembly is configured to support a substrate for processing in a face up orientation.

3. The deposition system of claim 2 , wherein the rotatable substrate support assembly comprises:

a vertical lift assembly; and

a plurality of substrate engaging fingers positioned in communication with the vertical lift assembly.

4. The deposition system of claim 3 , wherein the plurality of substrate engaging fingers and the vertical lift assembly are configured to cooperatively position the substrate in parallel relationship with a fluid diffusion member positioned in at least one of the first and second fluid processing stations.

5. The deposition system of claim 2 , wherein at least one of the first and second fluid processing stations further comprise:

a fluid diffusion member;

a base plate sealably engaging a perimeter of a backside of the fluid diffusion member and forming a fluid volume between the base plate and the backside of fluid diffusion member; and

a fluid supply conduit in fluid communication with the fluid volume.

6. The deposition system of claim 5 , wherein the fluid supply conduit is in fluid communication with a temperature controlled fluid source.

7. The deposition system of claim 5 , wherein the fluid diffusion member comprises a porous ceramic disk.

8. The deposition system of claim 5 , wherein the fluid diffusion member comprises a disk shaped member having a plurality of holes formed therethrough.

9. The deposition system of claim 8 , wherein the plurality of holes have a diameter of between about 0.7 mm and about 3 mm.

10. The fluid deposition system of claim 1 , wherein the first and second fluid processing stations each comprise a movable fluid dispensing arm in fluid communication with a source of temperature controlled processing fluid.

11. The fluid deposition system of claim 1 , wherein the environmentally controlled processing enclosure comprises a first processing volume positioned above the first fluid processing station and a second processing volume positioned above the second fluid processing station, the first processing volume being at least partially separated from the second processing volume by a central wall.

12. The deposition system of claim 11 , wherein a head space volume of the first and second processing volumes is each between about 1500 in 3 and 5000 in 3 .

13. The deposition system of claim 11 , wherein each of the first and second processing volumes has an environmental control assembly in communication with the processing volumes.

14. The deposition system of claim 13 , wherein the environmental control assembly comprises at least one of a processing gas supply, a heater, and a humidifier.

15. The deposition system of claim 14 , further comprising an exhaust port positioned in each of the first and second fluid processing stations.

16. The deposition system of claim 15 , wherein the processing gas supply and the exhaust port are cooperatively configured to maintain an oxygen content in the first and second processing volumes of less than about 100 ppm during a processing step.

17. A fluid deposition system for semiconductor processing, comprising:

a processing enclosure defining an environmentally controlled processing volume;

a first fluid processing cell positioned in the controlled processing volume;

a second fluid processing cell positioned in the controlled processing volume; and

a substrate shuttle positioned in the controlled processing volume and being configured to pivotally transfer a substrate between the first and second fluid processing cells,

wherein the first and second fluid processing cells each comprise:

a fluid permeable diffusion member, wherein the fluid diffusion member comprises a disk shaped member having a plurality of radially spaced fluid dispensing holes formed therethrough, and the fluid dispensing holes are in fluid communication with a temperature controlled fluid source;

a substrate support assembly configured to rotatably support a substrate in a face up configuration and in parallel relationship with the fluid diffusion member for processing; and

a fluid dispensing arm movably positioned above the substrate support assembly to dispense a processing liquid onto the substrate positioned on the substrate support assembly.

18. The deposition system of claim 17 , further comprising a controlled processing gas supply and a processing gas evacuation port both in fluid communication with the controlled processing volume, the processing gas supply and the processing gas evacuation port being cooperatively configured to generate less than about 100 ppm of oxygen in the processing volume.

19. The deposition system of claim 17 , further comprising a central wall positioned to separate the controlled processing volume into a first processing volume positioned over the first fluid processing cell and a second processing volume positioned over the second fluid processing cell.

20. The deposition system of claim 19 , wherein at least one of the first and second processing volumes has a head space volume of between about 1000 in 3 and 5000 in 3 .

21. The deposition system of claim 19 , wherein a vertical distance from the substrate to a lower surface of the top of the first and second processing volumes is between about 12 inches and about 36 inches.

22. The deposition system of claim 17 , wherein the fluid dispensing holes are in fluid communication with a temperature controlled liquid source.

23. The deposition system of claim 17 , wherein the fluid diffusion member comprises a fluidly permeable porous ceramic disk member.

24. The deposition system of claim 17 , wherein the substrate support assembly comprises a plurality of vertically actuatable substrate support fingers.

25. The deposition system of claim 17 , wherein the fluid dispensing arm is in fluid communication with a temperature controlled processing fluid source.