Composition for forming anti-reflective coating for use in lithography
A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
1. A composition for forming an anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof, and a crosslinking agent having at least two crosslink forming functional groups for forming the anti-reflective coating being used in the lithographic process in manufacture of the semiconductor device.
2. The composition according to claim 1 , wherein the component contains cyanuric acid or a derivative thereof, represented by formula (1):
wherein R 1 , R 2 and R 3 independently of one another are a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted benzene derivative group, a substituted or unsubstituted vinyl derivative group or an epoxy derivative group.
3. The composition according to claim 1 , wherein the component is a resin containing in a main chain or a side chain the structural unit derived from the compound of formula (1), or a resin containing in both a main chain and a side chain the structural unit derived from the compound of formula (1).
4. The composition according to claim 2 , wherein the compound of formula (1) is tris(hydroxyalkyl)isocyanurate.
5. The composition according to claim 3 , wherein the compound of formula (1) is tris(hydroxyalkyl)isocyanurate.
6. A semiconductor device, comprising:
a substrate;
the resin of claim 1 disposed on the substrate; and
a photoresist disposed on the resin, wherein the resin has a higher dry-etching rate than the photoresist.