Solar cell structure with by-pass diode and wrapped front-side diode interconnection
A solar cell structure includes a solar cell having a front side and a back side and an active semiconductor structure. The solar cell produces a voltage when the front side is illuminated. The solar cell is protected by a by-pass diode structure including a by-pass diode positioned at the back side of the solar cell. A first electrical interconnection structure extends between the back side of the solar cell and the first diode terminal, and a second electrical interconnection structure extends between the front side of the solar cell and the second diode terminal. An entire length of the second electrical interconnection structure contacts the solar cell.
1. A solar cell structure comprising:
a solar cell having a front side and a back side and comprising an active semiconductor structure, wherein the solar cell produces a voltage when the front side is illuminated; and
a by-pass diode structure, wherein the by-pass diode structure comprises
a by-pass diode positioned at the back side of the solar cell, wherein the by-pass diode has a first diode terminal and a second diode terminal,
a first electrical interconnection structure extending between the back side of the solar cell and the first diode terminal, and
a second electrical interconnection structure extending between the front side of the solar cell and the second diode terminal, wherein an entire length of the second electrical interconnection structure extending between the front side of the solar cell and the second diode terminal contacts the solar cell.
2. The solar cell structure of claim 1 , wherein the second electrical interconnection structure comprises
a via extending through the solar cell and having a via wall,
an insulation layer overlying and contacting at least a portion of the via wall, and
a metallic layer overlying and contacting the insulation layer and extending from the front side of the solar cell, along the via wall, and to the second diode terminal.
3. The solar cell structure of claim 1 , wherein the solar cell has a solar cell edge, and wherein the second electrical interconnection structure comprises
an insulation layer overlying at least a portion of the solar cell edge, and
a metallic layer overlying the insulation layer and extending from the front side of the solar cell, along the solar cell edge, and to the second diode terminal.
4. The solar cell structure of claim 1 , wherein the solar cell has a solar cell edge recess extending from the front side to the back side, and wherein the second electrical interconnection structure comprises
an insulation layer overlying at least a portion of the solar cell edge recess, and
a metallic layer overlying the insulation layer and extending from the front side of the solar cell, along the solar cell edge recess, and to the second diode terminal.
5. The solar cell structure of claim 1 , wherein the by-pass diode is supported on the back side of the solar cell.
6. The solar structure of claim 1 , wherein the solar cell further comprises
a front-side metallization contacting the front side of the solar cell, and wherein
the second electrical interconnection structure comprises a metallic layer extending between the front-side metallization and the second diode terminal.
7. A solar cell structure comprising:
a solar cell having a front side and a back side, wherein the solar cell comprises
a substrate facing the back side of the solar cell, and
an active semiconductor structure having a first side contacting the substrate in facing relation thereto and a second side facing the front side of the solar cell, wherein the active semiconductor structure comprises two semiconductor layers in facing contact with each other to form a semiconductor junction producing a voltage between the two semiconductor layers when illuminated; and
a by-pass diode structure, wherein the by-pass diode structure comprises
a by-pass diode positioned at the back side of the solar cell, wherein the by-pass diode has a first diode terminal and a second diode terminal,
a first electrical interconnection structure between the back side of the solar cell and the first diode terminal, and
a second electrical interconnection structure comprising a metallic layer upon the solar cell and extending between the front side of the solar cell and the second diode terminal.
8. The solar cell structure of claim 7 , wherein the second electrical interconnection structure comprises
a via extending through the solar cell and having a via wall,
an insulation layer overlying at least a portion of the via wall, and
the metallic layer overlying the insulation layer and extending from the front side of the solar cell, along the via wall, and to the second diode terminal.
9. The solar cell structure of claim 7 , wherein the solar cell has a solar cell edge, and wherein the second electrical interconnection structure comprises
an insulation layer overlying at least a portion of the solar cell edge, and
the metallic layer overlying the insulation layer and extending from the front side of the solar cell, along the solar cell edge, and to the second diode terminal.
10. The solar cell structure of claim 7 , wherein the solar cell has a solar cell edge recess, and wherein the second electrical interconnection structure comprises
an insulation layer overlying at least a portion of the solar cell edge recess, and
the metallic layer overlying the insulation layer and extending from the front side of the solar cell, along the solar cell edge recess, and to the second diode terminal.
11. The solar cell structure of claim 7 , wherein the by-pass diode is supported on the back side of the solar cell.
12. The solar structure of claim 7 , wherein the solar cell further comprises
a front-side metallization contacting the front side of the solar cell, and
wherein
the second electrical interconnection structure comprises the metallic layer extending between the front-side metallization and the second diode terminal.
13. A solar cell structure comprising:
a solar cell having a front side, a back side, and an integral pathway extending between the front side and the back aide, and wherein the solar cell comprises an active semiconductor structure, wherein the solar cell produces a voltage when the front side is illuminated: and
a by-pass diode structure, wherein the by-pass diode structure comprises
a by-pass diode positioned at the back side of the solar cell, wherein the by-pass diode has a first diode terminal and a second diode terminal,
a first electrical interconnection structure extending between the back side of the solar cell and the first diode terminal, and
a second electrical interconnection structure extending between the front side of the solar cell and the second diode terminal and in contact with the integral pathway of the solar cell along a length of the second electrical interconnection structure extending between the front side of the solar cell and the second diode terminal.
14. The solar cell structure of claim 13 , wherein the integral pathway comprises a via extending between the front side and the back side of the solar cell.
15. The solar cell structure of claim 13 , wherein the integral pathway comprises an edge of the solar cell extending between the front side and the back side of the solar cell.
16. The solar cell structure of claim 13 , wherein the integral pathway comprises an edge recess extending between the front side and the back side of the solar cell.
17. The solar cell structure of claim 13 , wherein the second electrical interconnection structure comprises
an insulation layer overlying and contacting the integral pathway, and
a metallic layer overlying and contacting the insulation layer and extending from the front side of the solar cell, along the integral pathway, and to the second diode terminal.
18. The solar cell structure of claim 13 , wherein the by-pass diode is supported on the back side of the solar cell.
19. The solar structure of claim 13 , wherein the solar cell further comprises
a front-side metallization contacting the front side of the solar cell, and
wherein
the second electrical interconnection structure comprises a metallic layer extending between the front-side metallization and the second diode terminal.