Charged particle beam apparatus
A charged particle beam apparatus in which an electrostatic lens is used as a main focusing element to obtain a subminiature high-sensitivity high-resolution SEM, a drift tube for an electron beam is located inside a column between an electron source and a sample, and a detector for secondary electrons is located inside the drift tube. This solves the problem associated with the provision of a secondary electron detector, which heretofore has been a bottleneck in making a subminiature high-resolution SEM column.
1. A charged particle beam apparatus comprising:
a charged particle beam source;
means for accelerating a charged particle beam emitted from the charged particle beam source;
a drift tube which constitutes a drift zone;
a sample stage on which a sample to be irradiated with the charged particle beam rests;
a detector which detects secondary electrons or backscattered electrons generated from the sample irradiated with a charged particle beam; and
an objective lens with an aperture through which the charged particle beam passes,
wherein the objective lens is located between the drift tube and the sample stage;
wherein the charged particle beam source is located outside the drift tube; and
wherein the detector is located in the drift tube.
2. A charged particle beam apparatus comprising:
a charged particle beam source;
means for accelerating a charged particle beam emitted from the charged particle beam source;
a drift tube which constitutes a drift zone;
a sample stage on which a sample to be irradiated with the charged particle beam rests;
a detector which detects secondary electrons or backscattered electrons generated from the sample irradiated with a charged particle beam; and
an electrostatic objective lens with an aperture through which the charged particle beam passes, including electrodes facing each other,
wherein the objective lens has a first electrode on the sample side and a second electrode on the charged particle beam source side;
wherein means for maintaining the drift tube and the detector at the same electric potential is provided;
wherein the sample side principal plane of the objective lens is formed between the first electrode and the sample stage;
wherein the charged particle beam source is located outside the drift tube; and
wherein the second electrode is located on the lower face of the drift tube.
3. A charged particle beam apparatus with at least a first column and a second column comprising:
a sample stage on which a sample common to the first column and the second column rests;
a column transport mechanism for moving the first column and the second column or a sample moving mechanism for moving the sample;
the first column and the second column each including:
a charged particle beam source;
means for accelerating a charged particle beam;
a drift tube which constitutes a drift zone;
an electrostatic objective lens for irradiating the sample with the charged particle beam; and
a detector which detects secondary electrons or backscattered electrons generated from the sample irradiated with the charged particle beam;
wherein the detector is located in the drift tube;
wherein the charged particle beam source is located outside the drift tube;
wherein the first column and the second column are symmetrical with respect to an axis perpendicular to the sample stage surface; and
wherein backscattered electrons generated by irradiation of the sample with the charged particle beam from the first column are detected by the detector of the second column.
4. A charged particle beam apparatus with a plurality of columns in a vacuum chamber comprising:
a sample stage on which a sample common to the plural columns rests;
a transport mechanism for moving the plural columns or a sample moving mechanism for moving the sample;
the plural columns each including:
a charged particle beam source;
means for accelerating a charged particle beam;
a drift tube which constitutes a drift zone;
an electrostatic objective lens for irradiating the sample with the charged particle beam; and
a detector which detects secondary electrons or backscattered electrons generated from the sample irradiated with the charged particle beam;
wherein the charged particle beam source is located outside the drift tube; and
wherein the detector is located in the drift tube.
5. The charged particle beam apparatus as described in claim 1 , wherein the objective lens has means for accelerating secondary electrons or backscattered electrons generated from the sample.
6. The charged particle beam apparatus as described in claim 1 ,
wherein the objective lens is an electrostatic objective lens including a first electrode on the sample side and a second electrode on the charged particle beam source side; and
wherein the second electrode is integral with the lower face of the drift tube.
7. The charged particle beam apparatus as described in claim 1 , wherein the sample side principal plane of the objective lens is formed between the objective lens and the sample stage.
8. The charged particle beam apparatus as described in claim 1 , further comprising:
a column including a charged particle beam source, means for accelerating a charged particle beam, a drift tube, an objective lens, and a detector; and
a column transport mechanism for moving the column.
9. The charged particle beam apparatus as described in claim 1 , further comprising a sample stage transport mechanism for moving the sample.
10. The charged particle beam apparatus as described in claim 2 , wherein distance Ldet from the second electrode to the detector in the drift tube is determined from distance Lobj between the first electrode and the second electrode, aperture size Dobj of the objective lens, and detection area outside diameter D 2 of the detector, in accordance with the following formula:
1
2
Lobj
(
D2
Dobj
-
1
)
≤
Ldet
≤
Lobj
(
D2
Dobj
-
1
)
.
11. The charged particle beam apparatus as described in claim 1 , further comprising a controller which controls voltage applied to the drift tube, voltage applied to the charged particle beam source, and voltage applied to the sample.
12. The charged particle beam apparatus as described in claim 1 , wherein the voltage applied to the drift tube is a positive voltage between 4 kV and 20 kV.
13. The charged particle beam apparatus as described in claim 1 , wherein
the zone is a drift zone; and
the drift zone is formed by the controller controlling various applied voltages.
14. The charged particle beam apparatus as described in claim 1 , wherein the detector has a plurality of detection areas and has means for picking up signals from the plural detection areas independently.
15. The charged particle beam apparatus as described in claim 1 , further comprising means for independently detecting secondary electrons and backscattered electrons generated by irradiation of the sample with a charged particle beam.
16. The charged particle beam apparatus as described in claim 1 , wherein the means for independently detecting secondary electrons and backscattered electrons is a backscattered electron detector located on the lower face of the objective lens.
17. The charged particle beam apparatus as described in claim 1 , wherein the means for independently detecting secondary electrons and backscattered electrons is an electric field control electrode or a Wien filter located inside the drift tube.
18. The charged particle beam apparatus as described in claim 1 , further comprising:
an electron gun including the charged particle beam source and an extraction electrode; and
a non-evaporative getter pump for vacuumizing the electron gun; and
means for heating the non-evaporative getter pump.
19. The charged particle beam apparatus as described in claim 18 , wherein a vacuum diaphragm of the electron gun has gas bypass means.
20. The charged particle beam apparatus as described in claim 19 , wherein the gas bypass means includes a bypass hole and a thermal deformation element such as bimetal for opening/closing the hole.