Illumination system particularly for microlithography
There is provided a projection exposure apparatus for microlithography using a wavelength less than or equal to 193 nm. The apparatus includes an optical element with a pupil raster element, and a projection objective with a real entrance pupil. The optical element is situated in or near a plane defined by the real entrance pupil.
1. A projection exposure apparatus for microlithography using a wavelength less than or equal to 193 nm, comprising:
an optical element with a pupil raster element; and
a projection objective with a real entrance pupil,
wherein said optical element is situated in or near a plane defined by said real entrance pupil.
2. The projection exposure apparatus according to claim 1 , wherein said optical element has a plurality of pupil raster elements.
3. The projection exposure apparatus according to claim 1 , wherein in a light path from a light source to a plane in which a field is illuminated, a further optical element with a field raster element is situated before said optical element with said pupil raster element.
4. The projection exposure apparatus according to claim 3 , wherein said optical element has a plurality of field raster elements.
5. The projection exposure apparatus according to claim 3 , wherein said field raster element has a shape of said field.
6. The projection exposure apparatus according to claim 5 , wherein said field raster element has an arcuate shape.
7. The projection exposure apparatus according to claim 1 , wherein in a light path from a light source to a plane in which a field is illuminated no further optical component are situated.
8. The projection exposure apparatus according to claim 1 , wherein said projection objective comprises at least four mirrors.
9. A method for producing microelectronic components, comprising employing the projection exposure apparatus of claim 1 .
10. A projection exposure apparatus for microlithography using a wavelength ≦193 nm, comprising:
a light source; and
an optical element with a pupil raster element, situated in a light path from said light source to a plane in which a field is illuminated,
wherein said projection exposure apparatus has no further optical component situated in said light path between said pupil raster element and said plane.
11. The projection exposure apparatus according to claim 10 , wherein said optical element has a plurality of pupil raster elements.
12. The projection exposure apparatus according to claim 10 , wherein said projection exposure apparatus further comprises a further optical element with a field raster element situated before said optical element with said pupil raster element.
13. The projection exposure apparatus according to claim 12 , wherein said further optical element with said field raster element has a plurality of field raster elements.
14. The projection exposure apparatus according to claim 12 , wherein said field raster element has a shape of said field.
15. The projection exposure apparatus according to claim 14 , wherein said field raster element has an arcuate shape.
16. The projection exposure apparatus according to claim 10 , wherein said projection exposure apparatus further comprises a projection objective.
17. The projection exposure apparatus according to claim 16 , wherein said projection objective has at least four mirrors.
18. A method for producing microelectronic components, comprising employing the projection exposure apparatus of claim 10 .
19. A projection exposure apparatus for microlithography using a wavelength ≦193 nm, comprising:
a light source; and
an optical element with a pupil raster element, situated in a light path from said light source to a plane in which a field is illuminated,
wherein said projection exposure apparatus has no imaging optical component situated in said light path between said pupil raster element and said plane.
20. The projection exposure apparatus according to claim 19 , wherein said optical element has a plurality of pupil raster elements.
21. The projection exposure apparatus according to claim 19 , wherein said projection exposure apparatus further comprises a further optical element with a field raster element situated before said optical element with said pupil raster element.
22. The projection exposure apparatus according to claim 21 , wherein said further optical element with said field raster element has a plurality of field raster elements.
23. The projection exposure apparatus according to claim 21 , wherein said field raster element has a shape of said field.
24. The projection exposure apparatus according to claim 21 , wherein said field raster element has an arcuate shape.
25. The projection exposure apparatus according to claim 19 , wherein said projection exposure apparatus further comprises a projection objective.
26. The projection exposure apparatus according to claim 25 , wherein said projection objective has at least four mirrors.
27. A method for producing microelectronic components, comprising employing the projection exposure apparatus of claim 19 .